Light induced changes in the defect structure of a-Si:H
The effect of light-soaking, using a simulated daylight spectrum (colour temperature 5800 K) on the crystallinity, defect structure, and total hydrogen concentration of a-Si:H grown by HW-CVD is being investigated in an ongoing project. In this article, positron beam based electron momentum spectros...
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| Veröffentlicht in: | Thin solid films 2003-04, Vol.430 (1), p.149-152 |
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| container_title | Thin solid films |
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| creator | Britton, D.T. Sigcau, Z. Comrie, C.M. Kanguwe, D.F. Minani, E. Knoesen, D. Härting, M. |
| description | The effect of light-soaking, using a simulated daylight spectrum (colour temperature 5800 K) on the crystallinity, defect structure, and total hydrogen concentration of a-Si:H grown by HW-CVD is being investigated in an ongoing project. In this article, positron beam based electron momentum spectroscopy is applied to monitor the evolution of the open-volume defect structure after each illumination stage. The results indicate an initial increase in free volume at dangling-bond complexes on illumination, with no indication of a change in defect concentration or generation of larger microvoids. On further illumination, there is a reduction in the low electron momentum fraction, which is not accompanied by a similar change in the free-volume. This can be interpreted as a reconfiguration of the hydrogen in the dangling-bond complex, followed by its release into a mobile state. |
| doi_str_mv | 10.1016/S0040-6090(03)00103-2 |
| format | Article |
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In this article, positron beam based electron momentum spectroscopy is applied to monitor the evolution of the open-volume defect structure after each illumination stage. The results indicate an initial increase in free volume at dangling-bond complexes on illumination, with no indication of a change in defect concentration or generation of larger microvoids. On further illumination, there is a reduction in the low electron momentum fraction, which is not accompanied by a similar change in the free-volume. 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| subjects | Condensed matter: structure, mechanical and thermal properties Defects and impurities: doping, implantation, distribution, concentration, etc Exact sciences and technology Light-induced degredation Physics Positron annihilation Structural defects Structural relaxation Surfaces and interfaces thin films and whiskers (structure and nonelectronic properties) Thin film structure and morphology |
| title | Light induced changes in the defect structure of a-Si:H |
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