Carbon-related complexes in neutron-irradiated silicon

In this work, we have studied point defects in carbon-doped Si material, irradiated by fast neutrons, via the observation of the Infrared absorption spectra. We mainly focus on carbon-related defects and their complexing with primary defects. We discuss the localized vibrational mode bands related t...

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Veröffentlicht in:Physica. B, Condensed matter Condensed matter, 2003-12, Vol.340-342, p.551-555
Hauptverfasser: Londos, C.A., Potsidi, M.S., Stakakis, E.
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Sprache:eng
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