Carbon-related complexes in neutron-irradiated silicon

In this work, we have studied point defects in carbon-doped Si material, irradiated by fast neutrons, via the observation of the Infrared absorption spectra. We mainly focus on carbon-related defects and their complexing with primary defects. We discuss the localized vibrational mode bands related to these defects, their annealing behavior and their interactions. Infrared spectra recorded at room temperature reveal the presence of a band at 544cm−1, appearing only in C-rich Si, and showing similar thermal stability to that of the di-carbon (CiCs) defect. In addition, its amplitude scales with the carbon content of the material. We attributed this band to the (CiCs) center. Two bands, at 987 and 993cm−1 were attributed to the CiCs(SiI) center. Furthermore, the origin of a C-related band at 943cm−1 is discussed.