Capacitance techniques for the evaluation of electronic properties and defects in disordered thin film semiconductors

The theoretical background of the Schottky barrier capacitance of disordered semiconductors is recalled and the temperature, frequency, and bias dependence of the capacitance is illustrated on hydrogenated amorphous silicon (a-Si:H), hydrogenated polymorphous silicon (pm-Si:H) and hydrogenated micro...

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Veröffentlicht in:	Thin solid films 2003-03, Vol.427 (1), p.127-132
1. Verfasser:	Kleider, J.P.
Format:	Artikel
Sprache:	eng
Schlagworte:	Capacitance Condensed matter: electronic structure, electrical, magnetic, and optical properties Defects Density of states Electron states and collective excitations in thin films, multilayers, quantum wells, mesoscopic and nanoscale systems Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures Exact sciences and technology Microcrystalline silicon Multilayers Physics Polymorphous silicon Surface double layers, schottky barriers, and work functions Thin films and multilayers
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