Capacitance techniques for the evaluation of electronic properties and defects in disordered thin film semiconductors
The theoretical background of the Schottky barrier capacitance of disordered semiconductors is recalled and the temperature, frequency, and bias dependence of the capacitance is illustrated on hydrogenated amorphous silicon (a-Si:H), hydrogenated polymorphous silicon (pm-Si:H) and hydrogenated micro...
Gespeichert in:
| Veröffentlicht in: | Thin solid films 2003-03, Vol.427 (1), p.127-132 |
|---|---|
| 1. Verfasser: | |
| Format: | Artikel |
| Sprache: | eng |
| Schlagworte: | |
| Online-Zugang: | Volltext |
| Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
| container_end_page | 132 |
|---|---|
| container_issue | 1 |
| container_start_page | 127 |
| container_title | Thin solid films |
| container_volume | 427 |
| creator | Kleider, J.P. |
| description | The theoretical background of the Schottky barrier capacitance of disordered semiconductors is recalled and the temperature, frequency, and bias dependence of the capacitance is illustrated on hydrogenated amorphous silicon (a-Si:H), hydrogenated polymorphous silicon (pm-Si:H) and hydrogenated microcrystalline silicon (μc-Si:H). Both a-Si:H and pm-Si:H follow the same trends, with a lower defect density in pm-Si:H. Quite different features are observed in μc-Si:H, and are related to different defect levels and to the two-phase constitution of the material. Finally, the capacitance analysis is reviewed in the framework of the amphoteric dangling bond states, where the influence of both defect transitions is emphasized. |
| doi_str_mv | 10.1016/S0040-6090(02)01158-6 |
| format | Article |
| fullrecord | <record><control><sourceid>proquest_cross</sourceid><recordid>TN_cdi_proquest_miscellaneous_27818598</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><els_id>S0040609002011586</els_id><sourcerecordid>27818598</sourcerecordid><originalsourceid>FETCH-LOGICAL-c368t-b6339325f6534b1f83595cf68aac5b663f031a38a90827e75a9ea72d406421233</originalsourceid><addsrcrecordid>eNqFkEuLFDEQgIMoOK7-BCEXRQ-tlaSTTp9EBl-w4EE9h5qkwkZ6OmOSXvDfm9lZ9OipKOqr18fYcwFvBAjz9hvACIOBGV6BfA1CaDuYB2wn7DQPclLiIdv9RR6zJ7X-BAAhpdqxbY8n9Knh6ok38jdr-rVR5TEX3m6I0y0uG7aUV54jp4V8K3lNnp9KPlFpqbO4Bh4o9lLlaeUh1VwCFQp9Qs9jWo680jH5vIbNt1zqU_Yo4lLp2X28Yj8-fvi-_zxcf_30Zf_-evDK2DYcjFKzkjoarcaDiFbpWftoLKLXB2NUBCVQWZzByokmjTPhJMMIZpRCKnXFXl7m9mvPbzV3TNXTsuBKeatOTlZYPdsO6gvoS661UHSnko5YfjsB7izZ3Ul2Z4MOpLuT7Ezve3G_AKvHJZbuMdV_zeMEdpzOh7y7cNS_vU1UXPWJuvOQSvfmQk7_2fQHRguSGw</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>27818598</pqid></control><display><type>article</type><title>Capacitance techniques for the evaluation of electronic properties and defects in disordered thin film semiconductors</title><source>ScienceDirect Journals (5 years ago - present)</source><creator>Kleider, J.P.</creator><creatorcontrib>Kleider, J.P.</creatorcontrib><description>The theoretical background of the Schottky barrier capacitance of disordered semiconductors is recalled and the temperature, frequency, and bias dependence of the capacitance is illustrated on hydrogenated amorphous silicon (a-Si:H), hydrogenated polymorphous silicon (pm-Si:H) and hydrogenated microcrystalline silicon (μc-Si:H). Both a-Si:H and pm-Si:H follow the same trends, with a lower defect density in pm-Si:H. Quite different features are observed in μc-Si:H, and are related to different defect levels and to the two-phase constitution of the material. Finally, the capacitance analysis is reviewed in the framework of the amphoteric dangling bond states, where the influence of both defect transitions is emphasized.</description><identifier>ISSN: 0040-6090</identifier><identifier>EISSN: 1879-2731</identifier><identifier>DOI: 10.1016/S0040-6090(02)01158-6</identifier><identifier>CODEN: THSFAP</identifier><language>eng</language><publisher>Lausanne: Elsevier B.V</publisher><subject>Capacitance ; Condensed matter: electronic structure, electrical, magnetic, and optical properties ; Defects ; Density of states ; Electron states and collective excitations in thin films, multilayers, quantum wells, mesoscopic and nanoscale systems ; Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures ; Exact sciences and technology ; Microcrystalline silicon ; Multilayers ; Physics ; Polymorphous silicon ; Surface double layers, schottky barriers, and work functions ; Thin films and multilayers</subject><ispartof>Thin solid films, 2003-03, Vol.427 (1), p.127-132</ispartof><rights>2002 Elsevier Science B.V.</rights><rights>2003 INIST-CNRS</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c368t-b6339325f6534b1f83595cf68aac5b663f031a38a90827e75a9ea72d406421233</citedby><cites>FETCH-LOGICAL-c368t-b6339325f6534b1f83595cf68aac5b663f031a38a90827e75a9ea72d406421233</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://dx.doi.org/10.1016/S0040-6090(02)01158-6$$EHTML$$P50$$Gelsevier$$H</linktohtml><link.rule.ids>309,310,314,780,784,789,790,3550,23930,23931,25140,27924,27925,45995</link.rule.ids><backlink>$$Uhttp://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&idt=14708473$$DView record in Pascal Francis$$Hfree_for_read</backlink></links><search><creatorcontrib>Kleider, J.P.</creatorcontrib><title>Capacitance techniques for the evaluation of electronic properties and defects in disordered thin film semiconductors</title><title>Thin solid films</title><description>The theoretical background of the Schottky barrier capacitance of disordered semiconductors is recalled and the temperature, frequency, and bias dependence of the capacitance is illustrated on hydrogenated amorphous silicon (a-Si:H), hydrogenated polymorphous silicon (pm-Si:H) and hydrogenated microcrystalline silicon (μc-Si:H). Both a-Si:H and pm-Si:H follow the same trends, with a lower defect density in pm-Si:H. Quite different features are observed in μc-Si:H, and are related to different defect levels and to the two-phase constitution of the material. Finally, the capacitance analysis is reviewed in the framework of the amphoteric dangling bond states, where the influence of both defect transitions is emphasized.</description><subject>Capacitance</subject><subject>Condensed matter: electronic structure, electrical, magnetic, and optical properties</subject><subject>Defects</subject><subject>Density of states</subject><subject>Electron states and collective excitations in thin films, multilayers, quantum wells, mesoscopic and nanoscale systems</subject><subject>Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures</subject><subject>Exact sciences and technology</subject><subject>Microcrystalline silicon</subject><subject>Multilayers</subject><subject>Physics</subject><subject>Polymorphous silicon</subject><subject>Surface double layers, schottky barriers, and work functions</subject><subject>Thin films and multilayers</subject><issn>0040-6090</issn><issn>1879-2731</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2003</creationdate><recordtype>article</recordtype><recordid>eNqFkEuLFDEQgIMoOK7-BCEXRQ-tlaSTTp9EBl-w4EE9h5qkwkZ6OmOSXvDfm9lZ9OipKOqr18fYcwFvBAjz9hvACIOBGV6BfA1CaDuYB2wn7DQPclLiIdv9RR6zJ7X-BAAhpdqxbY8n9Knh6ok38jdr-rVR5TEX3m6I0y0uG7aUV54jp4V8K3lNnp9KPlFpqbO4Bh4o9lLlaeUh1VwCFQp9Qs9jWo680jH5vIbNt1zqU_Yo4lLp2X28Yj8-fvi-_zxcf_30Zf_-evDK2DYcjFKzkjoarcaDiFbpWftoLKLXB2NUBCVQWZzByokmjTPhJMMIZpRCKnXFXl7m9mvPbzV3TNXTsuBKeatOTlZYPdsO6gvoS661UHSnko5YfjsB7izZ3Ul2Z4MOpLuT7Ezve3G_AKvHJZbuMdV_zeMEdpzOh7y7cNS_vU1UXPWJuvOQSvfmQk7_2fQHRguSGw</recordid><startdate>20030303</startdate><enddate>20030303</enddate><creator>Kleider, J.P.</creator><general>Elsevier B.V</general><general>Elsevier Science</general><scope>IQODW</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7SP</scope><scope>7U5</scope><scope>8FD</scope><scope>L7M</scope></search><sort><creationdate>20030303</creationdate><title>Capacitance techniques for the evaluation of electronic properties and defects in disordered thin film semiconductors</title><author>Kleider, J.P.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c368t-b6339325f6534b1f83595cf68aac5b663f031a38a90827e75a9ea72d406421233</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2003</creationdate><topic>Capacitance</topic><topic>Condensed matter: electronic structure, electrical, magnetic, and optical properties</topic><topic>Defects</topic><topic>Density of states</topic><topic>Electron states and collective excitations in thin films, multilayers, quantum wells, mesoscopic and nanoscale systems</topic><topic>Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures</topic><topic>Exact sciences and technology</topic><topic>Microcrystalline silicon</topic><topic>Multilayers</topic><topic>Physics</topic><topic>Polymorphous silicon</topic><topic>Surface double layers, schottky barriers, and work functions</topic><topic>Thin films and multilayers</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Kleider, J.P.</creatorcontrib><collection>Pascal-Francis</collection><collection>CrossRef</collection><collection>Electronics & Communications Abstracts</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>Technology Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>Thin solid films</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Kleider, J.P.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Capacitance techniques for the evaluation of electronic properties and defects in disordered thin film semiconductors</atitle><jtitle>Thin solid films</jtitle><date>2003-03-03</date><risdate>2003</risdate><volume>427</volume><issue>1</issue><spage>127</spage><epage>132</epage><pages>127-132</pages><issn>0040-6090</issn><eissn>1879-2731</eissn><coden>THSFAP</coden><abstract>The theoretical background of the Schottky barrier capacitance of disordered semiconductors is recalled and the temperature, frequency, and bias dependence of the capacitance is illustrated on hydrogenated amorphous silicon (a-Si:H), hydrogenated polymorphous silicon (pm-Si:H) and hydrogenated microcrystalline silicon (μc-Si:H). Both a-Si:H and pm-Si:H follow the same trends, with a lower defect density in pm-Si:H. Quite different features are observed in μc-Si:H, and are related to different defect levels and to the two-phase constitution of the material. Finally, the capacitance analysis is reviewed in the framework of the amphoteric dangling bond states, where the influence of both defect transitions is emphasized.</abstract><cop>Lausanne</cop><pub>Elsevier B.V</pub><doi>10.1016/S0040-6090(02)01158-6</doi><tpages>6</tpages></addata></record> |
| fulltext | fulltext |
| identifier | ISSN: 0040-6090 |
| ispartof | Thin solid films, 2003-03, Vol.427 (1), p.127-132 |
| issn | 0040-6090 1879-2731 |
| language | eng |
| recordid | cdi_proquest_miscellaneous_27818598 |
| source | ScienceDirect Journals (5 years ago - present) |
| subjects | Capacitance Condensed matter: electronic structure, electrical, magnetic, and optical properties Defects Density of states Electron states and collective excitations in thin films, multilayers, quantum wells, mesoscopic and nanoscale systems Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures Exact sciences and technology Microcrystalline silicon Multilayers Physics Polymorphous silicon Surface double layers, schottky barriers, and work functions Thin films and multilayers |
| title | Capacitance techniques for the evaluation of electronic properties and defects in disordered thin film semiconductors |
| url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-07T13%3A50%3A38IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-proquest_cross&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Capacitance%20techniques%20for%20the%20evaluation%20of%20electronic%20properties%20and%20defects%20in%20disordered%20thin%20film%20semiconductors&rft.jtitle=Thin%20solid%20films&rft.au=Kleider,%20J.P.&rft.date=2003-03-03&rft.volume=427&rft.issue=1&rft.spage=127&rft.epage=132&rft.pages=127-132&rft.issn=0040-6090&rft.eissn=1879-2731&rft.coden=THSFAP&rft_id=info:doi/10.1016/S0040-6090(02)01158-6&rft_dat=%3Cproquest_cross%3E27818598%3C/proquest_cross%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_pqid=27818598&rft_id=info:pmid/&rft_els_id=S0040609002011586&rfr_iscdi=true |