Comparison of thermal and plasma oxidations for HfO2/Si interface

The HfO2/Si interface stability has been investigated by using a rapid thermal annealing (RTA), an inductively coupled plasma (ICP) and a reactive sputtering, as a comparison of thermal and plasma oxidations of the Hf/Si interface. Reduction in both capacitance equivalent thickness (CET) and leakage...

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Veröffentlicht in:	Applied surface science 2003-06, Vol.216 (1-4), p.228-233
Hauptverfasser:	HAYASHI, S, YAMAMOTO, K, HARADA, Y, MITSUHASHI, R, ERIGUCHI, K, KUBOTA, M, NIWA, M
Format:	Artikel
Sprache:	eng
Schlagworte:	Applied sciences Condensed matter: electronic structure, electrical, magnetic, and optical properties Condensed matter: structure, mechanical and thermal properties Cross-disciplinary physics: materials science rheology Electrical properties of specific thin films Electrical properties of specific thin films and layer structures (multilayers, superlattices, quantum wells, wires, and dots) Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures Electronics Exact sciences and technology Field effect devices Interface structure and roughness Materials science Metals. Metallurgy Oxidation Physics Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Solid surfaces and solid-solid interfaces Surface treatments Surfaces and interfaces thin films and whiskers (structure and nonelectronic properties) Transistors
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