Characterization of polycrystalline SiC layers grown by ECR-PECVD for micro-electro-mechanical systems

Large area (up to 4 inch) polycrystalline 3C-SiC films have been deposited by electron cyclotron resonance chemical vapor deposition technique. Crystalline and non-crystalline substrates such as (1 0 0) Si wafers, thermally oxidized Si wafers and Al 2O 3 ceramic sheets have been used, maintaining the same deposition conditions. The structural and morphological properties of the films were analyzed by means of transmission electron microscopy and X-ray diffractometry, while surface morphology was characterized by atomic force microscopy. Preliminary results on technological processes for the realization of polycrystalline SiC based micro-electro-mechanical systems are reported.