Characterisation of HfO2 deposited by photo-induced chemical vapour deposition
The deposition of thin Hafnia (HfO2) films on crystalline Si by photo-induced CVD using 222 nm excimer lamps at temperatures between 300 and 450 C is presented. Hafnium (IV) tetra-t-butoxide was used as the precursor, which was carried into the photochemical reaction chamber by flowing Ar carrier ga...
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| Veröffentlicht in: | Thin solid films 2003-03, Vol.427 (1-2), p.391-396 |
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| creator | FANG, Q ZHANG, J.-Y SENATEUR, J.-P BOYD, Ian W WANG, Z. M WU, J. X O'SULLIVAN, B. J HURLEY, P. K LEEDHAM, T. L DAVIES, H AUDIER, M. A JIMENEZ, C |
| description | The deposition of thin Hafnia (HfO2) films on crystalline Si by photo-induced CVD using 222 nm excimer lamps at temperatures between 300 and 450 C is presented. Hafnium (IV) tetra-t-butoxide was used as the precursor, which was carried into the photochemical reaction chamber by flowing Ar carrier gas at a pressure of several mbar using a special precursor injection system. Films from approximately 6-70 nm in thickness with refractive indices from 1.60 to 1.85 were grown. The deposition rate measured by ellipsometry was found to be 15 nmmin-1 at a temperature of 400 C. The deposited HfO2 films were characterised by various techniques. XRD showed that as-deposited HfO2 films were basically amorphous. Fourier transform infrared spectroscopy, revealed that Hf-O absorption in the photo-CVD deposited HfO2 films is quite different at various deposition parameters. The substrate temperature, system pressure and UV-annealing dependence of the physical and interfacial properties of these films will also be presented. 31 refs. |
| doi_str_mv | 10.1016/S0040-6090(02)01181-1 |
| format | Article |
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XRD showed that as-deposited HfO2 films were basically amorphous. Fourier transform infrared spectroscopy, revealed that Hf-O absorption in the photo-CVD deposited HfO2 films is quite different at various deposition parameters. 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The deposition rate measured by ellipsometry was found to be 15 nmmin-1 at a temperature of 400 C. The deposited HfO2 films were characterised by various techniques. XRD showed that as-deposited HfO2 films were basically amorphous. Fourier transform infrared spectroscopy, revealed that Hf-O absorption in the photo-CVD deposited HfO2 films is quite different at various deposition parameters. 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| subjects | Chemical vapor deposition (including plasma-enhanced cvd, mocvd, etc.) Cross-disciplinary physics: materials science rheology Exact sciences and technology Materials science Methods of deposition of films and coatings film growth and epitaxy Physics |
| title | Characterisation of HfO2 deposited by photo-induced chemical vapour deposition |
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