Obtaining of epitaxial films of metal silicides by ion implantation and molecular beam epitaxy
The CoSi 2, NiSi 2, NaSi 2 and BaSi 2 thin epitaxial films have been obtained by molecular beam epitaxy and ion implantation. The growth mechanisms as well as the composition, electron and crystalline structure of these films were studied and determinate. It was shown that NiSi 2, CoSi 2, BaSi 2 and...
Gespeichert in:
| Veröffentlicht in: | Materials science & engineering. B, Solid-state materials for advanced technology Solid-state materials for advanced technology, 2003-08, Vol.101 (1), p.124-127 |
|---|---|
| Hauptverfasser: | , , , |
| Format: | Artikel |
| Sprache: | eng |
| Schlagworte: | |
| Online-Zugang: | Volltext |
| Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
| container_end_page | 127 |
|---|---|
| container_issue | 1 |
| container_start_page | 124 |
| container_title | Materials science & engineering. B, Solid-state materials for advanced technology |
| container_volume | 101 |
| creator | Umirzakov, B.E. Tashmukhamedova, D.A. Boltaev, E.U. Dzhurakhalov, A.A. |
| description | The CoSi
2, NiSi
2, NaSi
2 and BaSi
2 thin epitaxial films have been obtained by molecular beam epitaxy and ion implantation. The growth mechanisms as well as the composition, electron and crystalline structure of these films were studied and determinate. It was shown that NiSi
2, CoSi
2, BaSi
2 and NaSi
2 epitaxial films crystallise as cubic lattice, and the bond between atoms of metal and Si has ionic-covalent nature. It was determined that the metal silicide films are heterostructure relatively Si and their width band gap make up 0.5–0.7 eV. |
| doi_str_mv | 10.1016/S0921-5107(02)00677-3 |
| format | Article |
| fullrecord | <record><control><sourceid>proquest_cross</sourceid><recordid>TN_cdi_proquest_miscellaneous_27805260</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><els_id>S0921510702006773</els_id><sourcerecordid>27805260</sourcerecordid><originalsourceid>FETCH-LOGICAL-c404t-f8a19a9e57777767a034ec1b7f606b0c467865b3ba677ce51987ce8fd200fd693</originalsourceid><addsrcrecordid>eNqFUE1LxDAUDKLguvoThJxED9WXtE3ak8jiFyzsQb0a0vRFIv0yyYr77213F6--y_AeM8ObIeScwTUDJm5eoOQsyRnIS-BXAELKJD0gM1bINMnKLDsksz_KMTkJ4RMAGOd8Rt5XVdSuc90H7S3FwUX943RDrWvaMJ1ajOMaXOOMqzHQakNd31HXDo3uoo7Toruatn2DZt1oTyvU7d5pc0qOrG4Cnu1xTt4e7l8XT8ly9fi8uFsmJoMsJrbQrNQl5nIaITWkGRpWSStAVGAyIQuRV2mlx2wGc1YWIxS25gC2FmU6Jxc738H3X2sMUbUuGGzGH7FfB8VlATkXMBLzHdH4PgSPVg3etdpvFAM1tam2baqpKgVcbdtU6ai73elwTPHt0KtgHHYGa-fRRFX37h-HXzGtfNc</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>27805260</pqid></control><display><type>article</type><title>Obtaining of epitaxial films of metal silicides by ion implantation and molecular beam epitaxy</title><source>Access via ScienceDirect (Elsevier)</source><creator>Umirzakov, B.E. ; Tashmukhamedova, D.A. ; Boltaev, E.U. ; Dzhurakhalov, A.A.</creator><creatorcontrib>Umirzakov, B.E. ; Tashmukhamedova, D.A. ; Boltaev, E.U. ; Dzhurakhalov, A.A.</creatorcontrib><description>The CoSi
2, NiSi
2, NaSi
2 and BaSi
2 thin epitaxial films have been obtained by molecular beam epitaxy and ion implantation. The growth mechanisms as well as the composition, electron and crystalline structure of these films were studied and determinate. It was shown that NiSi
2, CoSi
2, BaSi
2 and NaSi
2 epitaxial films crystallise as cubic lattice, and the bond between atoms of metal and Si has ionic-covalent nature. It was determined that the metal silicide films are heterostructure relatively Si and their width band gap make up 0.5–0.7 eV.</description><identifier>ISSN: 0921-5107</identifier><identifier>EISSN: 1873-4944</identifier><identifier>DOI: 10.1016/S0921-5107(02)00677-3</identifier><language>eng</language><publisher>Elsevier B.V</publisher><subject>Electron and crystalline structure ; Ion implantation and molecular beam epitaxy ; Silicides of metals ; Thin epitaxial films</subject><ispartof>Materials science & engineering. B, Solid-state materials for advanced technology, 2003-08, Vol.101 (1), p.124-127</ispartof><rights>2003</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c404t-f8a19a9e57777767a034ec1b7f606b0c467865b3ba677ce51987ce8fd200fd693</citedby><cites>FETCH-LOGICAL-c404t-f8a19a9e57777767a034ec1b7f606b0c467865b3ba677ce51987ce8fd200fd693</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://dx.doi.org/10.1016/S0921-5107(02)00677-3$$EHTML$$P50$$Gelsevier$$H</linktohtml><link.rule.ids>314,780,784,3550,27924,27925,45995</link.rule.ids></links><search><creatorcontrib>Umirzakov, B.E.</creatorcontrib><creatorcontrib>Tashmukhamedova, D.A.</creatorcontrib><creatorcontrib>Boltaev, E.U.</creatorcontrib><creatorcontrib>Dzhurakhalov, A.A.</creatorcontrib><title>Obtaining of epitaxial films of metal silicides by ion implantation and molecular beam epitaxy</title><title>Materials science & engineering. B, Solid-state materials for advanced technology</title><description>The CoSi
2, NiSi
2, NaSi
2 and BaSi
2 thin epitaxial films have been obtained by molecular beam epitaxy and ion implantation. The growth mechanisms as well as the composition, electron and crystalline structure of these films were studied and determinate. It was shown that NiSi
2, CoSi
2, BaSi
2 and NaSi
2 epitaxial films crystallise as cubic lattice, and the bond between atoms of metal and Si has ionic-covalent nature. It was determined that the metal silicide films are heterostructure relatively Si and their width band gap make up 0.5–0.7 eV.</description><subject>Electron and crystalline structure</subject><subject>Ion implantation and molecular beam epitaxy</subject><subject>Silicides of metals</subject><subject>Thin epitaxial films</subject><issn>0921-5107</issn><issn>1873-4944</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2003</creationdate><recordtype>article</recordtype><recordid>eNqFUE1LxDAUDKLguvoThJxED9WXtE3ak8jiFyzsQb0a0vRFIv0yyYr77213F6--y_AeM8ObIeScwTUDJm5eoOQsyRnIS-BXAELKJD0gM1bINMnKLDsksz_KMTkJ4RMAGOd8Rt5XVdSuc90H7S3FwUX943RDrWvaMJ1ajOMaXOOMqzHQakNd31HXDo3uoo7Toruatn2DZt1oTyvU7d5pc0qOrG4Cnu1xTt4e7l8XT8ly9fi8uFsmJoMsJrbQrNQl5nIaITWkGRpWSStAVGAyIQuRV2mlx2wGc1YWIxS25gC2FmU6Jxc738H3X2sMUbUuGGzGH7FfB8VlATkXMBLzHdH4PgSPVg3etdpvFAM1tam2baqpKgVcbdtU6ai73elwTPHt0KtgHHYGa-fRRFX37h-HXzGtfNc</recordid><startdate>20030815</startdate><enddate>20030815</enddate><creator>Umirzakov, B.E.</creator><creator>Tashmukhamedova, D.A.</creator><creator>Boltaev, E.U.</creator><creator>Dzhurakhalov, A.A.</creator><general>Elsevier B.V</general><scope>AAYXX</scope><scope>CITATION</scope><scope>7SP</scope><scope>7SR</scope><scope>7U5</scope><scope>8FD</scope><scope>JG9</scope><scope>L7M</scope></search><sort><creationdate>20030815</creationdate><title>Obtaining of epitaxial films of metal silicides by ion implantation and molecular beam epitaxy</title><author>Umirzakov, B.E. ; Tashmukhamedova, D.A. ; Boltaev, E.U. ; Dzhurakhalov, A.A.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c404t-f8a19a9e57777767a034ec1b7f606b0c467865b3ba677ce51987ce8fd200fd693</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2003</creationdate><topic>Electron and crystalline structure</topic><topic>Ion implantation and molecular beam epitaxy</topic><topic>Silicides of metals</topic><topic>Thin epitaxial films</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Umirzakov, B.E.</creatorcontrib><creatorcontrib>Tashmukhamedova, D.A.</creatorcontrib><creatorcontrib>Boltaev, E.U.</creatorcontrib><creatorcontrib>Dzhurakhalov, A.A.</creatorcontrib><collection>CrossRef</collection><collection>Electronics & Communications Abstracts</collection><collection>Engineered Materials Abstracts</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>Technology Research Database</collection><collection>Materials Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>Materials science & engineering. B, Solid-state materials for advanced technology</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Umirzakov, B.E.</au><au>Tashmukhamedova, D.A.</au><au>Boltaev, E.U.</au><au>Dzhurakhalov, A.A.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Obtaining of epitaxial films of metal silicides by ion implantation and molecular beam epitaxy</atitle><jtitle>Materials science & engineering. B, Solid-state materials for advanced technology</jtitle><date>2003-08-15</date><risdate>2003</risdate><volume>101</volume><issue>1</issue><spage>124</spage><epage>127</epage><pages>124-127</pages><issn>0921-5107</issn><eissn>1873-4944</eissn><abstract>The CoSi
2, NiSi
2, NaSi
2 and BaSi
2 thin epitaxial films have been obtained by molecular beam epitaxy and ion implantation. The growth mechanisms as well as the composition, electron and crystalline structure of these films were studied and determinate. It was shown that NiSi
2, CoSi
2, BaSi
2 and NaSi
2 epitaxial films crystallise as cubic lattice, and the bond between atoms of metal and Si has ionic-covalent nature. It was determined that the metal silicide films are heterostructure relatively Si and their width band gap make up 0.5–0.7 eV.</abstract><pub>Elsevier B.V</pub><doi>10.1016/S0921-5107(02)00677-3</doi><tpages>4</tpages></addata></record> |
| fulltext | fulltext |
| identifier | ISSN: 0921-5107 |
| ispartof | Materials science & engineering. B, Solid-state materials for advanced technology, 2003-08, Vol.101 (1), p.124-127 |
| issn | 0921-5107 1873-4944 |
| language | eng |
| recordid | cdi_proquest_miscellaneous_27805260 |
| source | Access via ScienceDirect (Elsevier) |
| subjects | Electron and crystalline structure Ion implantation and molecular beam epitaxy Silicides of metals Thin epitaxial films |
| title | Obtaining of epitaxial films of metal silicides by ion implantation and molecular beam epitaxy |
| url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-01T03%3A40%3A23IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-proquest_cross&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Obtaining%20of%20epitaxial%20films%20of%20metal%20silicides%20by%20ion%20implantation%20and%20molecular%20beam%20epitaxy&rft.jtitle=Materials%20science%20&%20engineering.%20B,%20Solid-state%20materials%20for%20advanced%20technology&rft.au=Umirzakov,%20B.E.&rft.date=2003-08-15&rft.volume=101&rft.issue=1&rft.spage=124&rft.epage=127&rft.pages=124-127&rft.issn=0921-5107&rft.eissn=1873-4944&rft_id=info:doi/10.1016/S0921-5107(02)00677-3&rft_dat=%3Cproquest_cross%3E27805260%3C/proquest_cross%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_pqid=27805260&rft_id=info:pmid/&rft_els_id=S0921510702006773&rfr_iscdi=true |