Abnormal silicon oxide growth on cobalt silicide in arsenic-doped N+ active areas

During the deposition process of silicon oxide, we found an unexpected oxide growth on a CoSi 2 layer in an arsenic-doped N+ active area, showing the degradation of contact resistance in this area. The role of arsenic was investigated in order to explain its effects on the abnormal oxidation. This a...

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Veröffentlicht in:	Materials letters 2003-07, Vol.57 (22), p.3565-3569
Hauptverfasser:	Lee, Won Gyu, Sung, Nak Kyun, Cho, Ihl Hyun, Ryu, Hyuk Hyun
Format:	Artikel
Sprache:	eng
Schlagworte:	Abnormal oxidation Active area Applied sciences Arsenic CoSi 2 Cross-disciplinary physics: materials science rheology Electronics Exact sciences and technology Materials science Metallization, contacts, interconnects device isolation Methods of deposition of films and coatings film growth and epitaxy Microelectronic fabrication (materials and surfaces technology) Out-diffusion Physics Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Solid phase epitaxy growth from solid phases
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