Phase defect characterization using generative adversarial networks for extreme ultraviolet lithography

The multilayer defects of mask blanks in extreme ultraviolet (EUV) lithography may cause severe reflectivity deformation and phase shift. The profile information of a multilayer defect is the key factor for mask defect compensation or repair. This paper introduces an artificial neural network framew...

Ausführliche Beschreibung

Bibliographische Detailangaben

Veröffentlicht in:	Applied optics (2004) 2023-02, Vol.62 (5), p.1243-1252
Hauptverfasser:	Zheng, Hang, Li, Sikun, Cheng, Wei, Yuan, Shuai, Wang, Xiangzhao
Format:	Artikel
Sprache:	eng
Schlagworte:	Artificial neural networks Blanks Defects Extreme ultraviolet radiation Generative adversarial networks Lithography Multilayers
Online-Zugang:	Volltext
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!