The role of mask charging in profile evolution and gate oxide degradation

Through detailed numerical simulations we investigate the role of insulator mask thickness in altering the fidelity of pattern transfer and causing damage to buried gate oxides during plasma etching. While a certain scaling with the mask aspect ratio is known to exist, we find that the mask thicknes...

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Veröffentlicht in:	Microelectronic engineering 2002-07, Vol.61, p.835-847
Hauptverfasser:	Giapis, K.P., Hwang, G.S., Joubert, O.
Format:	Artikel
Sprache:	eng
Schlagworte:	Applied sciences Electronics Exact sciences and technology Gate oxide damage Mask charging Microelectronic fabrication (materials and surfaces technology) Plasma etching Profile evolution Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Online-Zugang:	Volltext
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