Time dependence of electrical properties of SrBi2Ta2O9 thin films after top electrode annealing
The high leakage current density was measured immediately after the top electrode annealing but leakage current characteristics were improved with increasing time. In C-F characteristics, the low frequency dielectric dispersion was observed and the dispersion frequency moved to low frequency due to...
Gespeichert in:
| Veröffentlicht in: | Materials letters 2000-09, Vol.45 (3-4), p.208-212 |
|---|---|
| Hauptverfasser: | , , , , |
| Format: | Artikel |
| Sprache: | eng |
| Schlagworte: | |
| Online-Zugang: | Volltext |
| Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
| container_end_page | 212 |
|---|---|
| container_issue | 3-4 |
| container_start_page | 208 |
| container_title | Materials letters |
| container_volume | 45 |
| creator | CHOI, G.-P PARK, J.-H LEE, C.-H KIM, I.-D KIM, H.-G |
| description | The high leakage current density was measured immediately after the top electrode annealing but leakage current characteristics were improved with increasing time. In C-F characteristics, the low frequency dielectric dispersion was observed and the dispersion frequency moved to low frequency due to an increase of the interface resistance. The time dependence of electrical properties are attributed to the gradual decrease of conductivity of (semi)conducting paths. The conducting path may be formed by the diffusion of metallic Bi and the reduction of Bi oxide during the top electrode annealing and its conductivity may be decreased due to the interaction of metallic Bi with oxygen atoms after the stabilisation. 12 refs. |
| doi_str_mv | 10.1016/S0167-577X(00)00106-3 |
| format | Article |
| fullrecord | <record><control><sourceid>proquest_cross</sourceid><recordid>TN_cdi_proquest_miscellaneous_27763652</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>27763652</sourcerecordid><originalsourceid>FETCH-LOGICAL-c258t-a0d0c9b3841aa700562793e14657809c665ca58185216ea5644340638c1e5a63</originalsourceid><addsrcrecordid>eNo9kE1LAzEQhoMoWKs_QQgIoofVyeZzj1r8gkIP3YO3ELOzGtkvk-3Bf--2ll5mDvM-M8NDyCWDOwZM3a-nojOp9fsNwC0AA5XxIzJjRvNMFLo4JrND5JScpfQNAKIAMSO2DC3SCgfsKuw80r6m2KAfY_CuoUPsB4xjwLQdrONjyEuXrwo6foWO1qFpE3X1iJGO_bAH-wqp6zp0Teg-z8lJ7ZqEF_s-J-XzU7l4zZarl7fFwzLzuTRj5qACX3xwI5hzGkCqXBccmVBSGyi8UtI7aZiROVPopBKCC1DceIbSKT4n1_9rp4d_NphG24bksWlch_0m2VxrxZXMp6D8D_rYpxSxtkMMrYu_loHd2rQ7m3arygLYnU3LJ-5qf8ClSUwdXedDOsBGGK40_wO8UHOO</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>27763652</pqid></control><display><type>article</type><title>Time dependence of electrical properties of SrBi2Ta2O9 thin films after top electrode annealing</title><source>Elsevier ScienceDirect Journals</source><creator>CHOI, G.-P ; PARK, J.-H ; LEE, C.-H ; KIM, I.-D ; KIM, H.-G</creator><contributor>WCA</contributor><creatorcontrib>CHOI, G.-P ; PARK, J.-H ; LEE, C.-H ; KIM, I.-D ; KIM, H.-G ; WCA</creatorcontrib><description>The high leakage current density was measured immediately after the top electrode annealing but leakage current characteristics were improved with increasing time. In C-F characteristics, the low frequency dielectric dispersion was observed and the dispersion frequency moved to low frequency due to an increase of the interface resistance. The time dependence of electrical properties are attributed to the gradual decrease of conductivity of (semi)conducting paths. The conducting path may be formed by the diffusion of metallic Bi and the reduction of Bi oxide during the top electrode annealing and its conductivity may be decreased due to the interaction of metallic Bi with oxygen atoms after the stabilisation. 12 refs.</description><identifier>ISSN: 0167-577X</identifier><identifier>EISSN: 1873-4979</identifier><identifier>DOI: 10.1016/S0167-577X(00)00106-3</identifier><identifier>CODEN: MLETDJ</identifier><language>eng</language><publisher>Amsterdam: Elsevier</publisher><subject>Condensed matter: electronic structure, electrical, magnetic, and optical properties ; Dielectric thin films ; Dielectric, piezoelectric, ferroelectric and antiferroelectric materials ; Dielectrics, piezoelectrics, and ferroelectrics and their properties ; Exact sciences and technology ; Niobates, titanates, tantalates, pzt ceramics, etc ; Physics</subject><ispartof>Materials letters, 2000-09, Vol.45 (3-4), p.208-212</ispartof><rights>2001 INIST-CNRS</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><cites>FETCH-LOGICAL-c258t-a0d0c9b3841aa700562793e14657809c665ca58185216ea5644340638c1e5a63</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,776,780,27901,27902</link.rule.ids><backlink>$$Uhttp://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&idt=848367$$DView record in Pascal Francis$$Hfree_for_read</backlink></links><search><contributor>WCA</contributor><creatorcontrib>CHOI, G.-P</creatorcontrib><creatorcontrib>PARK, J.-H</creatorcontrib><creatorcontrib>LEE, C.-H</creatorcontrib><creatorcontrib>KIM, I.-D</creatorcontrib><creatorcontrib>KIM, H.-G</creatorcontrib><title>Time dependence of electrical properties of SrBi2Ta2O9 thin films after top electrode annealing</title><title>Materials letters</title><description>The high leakage current density was measured immediately after the top electrode annealing but leakage current characteristics were improved with increasing time. In C-F characteristics, the low frequency dielectric dispersion was observed and the dispersion frequency moved to low frequency due to an increase of the interface resistance. The time dependence of electrical properties are attributed to the gradual decrease of conductivity of (semi)conducting paths. The conducting path may be formed by the diffusion of metallic Bi and the reduction of Bi oxide during the top electrode annealing and its conductivity may be decreased due to the interaction of metallic Bi with oxygen atoms after the stabilisation. 12 refs.</description><subject>Condensed matter: electronic structure, electrical, magnetic, and optical properties</subject><subject>Dielectric thin films</subject><subject>Dielectric, piezoelectric, ferroelectric and antiferroelectric materials</subject><subject>Dielectrics, piezoelectrics, and ferroelectrics and their properties</subject><subject>Exact sciences and technology</subject><subject>Niobates, titanates, tantalates, pzt ceramics, etc</subject><subject>Physics</subject><issn>0167-577X</issn><issn>1873-4979</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2000</creationdate><recordtype>article</recordtype><recordid>eNo9kE1LAzEQhoMoWKs_QQgIoofVyeZzj1r8gkIP3YO3ELOzGtkvk-3Bf--2ll5mDvM-M8NDyCWDOwZM3a-nojOp9fsNwC0AA5XxIzJjRvNMFLo4JrND5JScpfQNAKIAMSO2DC3SCgfsKuw80r6m2KAfY_CuoUPsB4xjwLQdrONjyEuXrwo6foWO1qFpE3X1iJGO_bAH-wqp6zp0Teg-z8lJ7ZqEF_s-J-XzU7l4zZarl7fFwzLzuTRj5qACX3xwI5hzGkCqXBccmVBSGyi8UtI7aZiROVPopBKCC1DceIbSKT4n1_9rp4d_NphG24bksWlch_0m2VxrxZXMp6D8D_rYpxSxtkMMrYu_loHd2rQ7m3arygLYnU3LJ-5qf8ClSUwdXedDOsBGGK40_wO8UHOO</recordid><startdate>20000901</startdate><enddate>20000901</enddate><creator>CHOI, G.-P</creator><creator>PARK, J.-H</creator><creator>LEE, C.-H</creator><creator>KIM, I.-D</creator><creator>KIM, H.-G</creator><general>Elsevier</general><scope>IQODW</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7QQ</scope><scope>8FD</scope><scope>JG9</scope></search><sort><creationdate>20000901</creationdate><title>Time dependence of electrical properties of SrBi2Ta2O9 thin films after top electrode annealing</title><author>CHOI, G.-P ; PARK, J.-H ; LEE, C.-H ; KIM, I.-D ; KIM, H.-G</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c258t-a0d0c9b3841aa700562793e14657809c665ca58185216ea5644340638c1e5a63</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2000</creationdate><topic>Condensed matter: electronic structure, electrical, magnetic, and optical properties</topic><topic>Dielectric thin films</topic><topic>Dielectric, piezoelectric, ferroelectric and antiferroelectric materials</topic><topic>Dielectrics, piezoelectrics, and ferroelectrics and their properties</topic><topic>Exact sciences and technology</topic><topic>Niobates, titanates, tantalates, pzt ceramics, etc</topic><topic>Physics</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>CHOI, G.-P</creatorcontrib><creatorcontrib>PARK, J.-H</creatorcontrib><creatorcontrib>LEE, C.-H</creatorcontrib><creatorcontrib>KIM, I.-D</creatorcontrib><creatorcontrib>KIM, H.-G</creatorcontrib><collection>Pascal-Francis</collection><collection>CrossRef</collection><collection>Ceramic Abstracts</collection><collection>Technology Research Database</collection><collection>Materials Research Database</collection><jtitle>Materials letters</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>CHOI, G.-P</au><au>PARK, J.-H</au><au>LEE, C.-H</au><au>KIM, I.-D</au><au>KIM, H.-G</au><au>WCA</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Time dependence of electrical properties of SrBi2Ta2O9 thin films after top electrode annealing</atitle><jtitle>Materials letters</jtitle><date>2000-09-01</date><risdate>2000</risdate><volume>45</volume><issue>3-4</issue><spage>208</spage><epage>212</epage><pages>208-212</pages><issn>0167-577X</issn><eissn>1873-4979</eissn><coden>MLETDJ</coden><abstract>The high leakage current density was measured immediately after the top electrode annealing but leakage current characteristics were improved with increasing time. In C-F characteristics, the low frequency dielectric dispersion was observed and the dispersion frequency moved to low frequency due to an increase of the interface resistance. The time dependence of electrical properties are attributed to the gradual decrease of conductivity of (semi)conducting paths. The conducting path may be formed by the diffusion of metallic Bi and the reduction of Bi oxide during the top electrode annealing and its conductivity may be decreased due to the interaction of metallic Bi with oxygen atoms after the stabilisation. 12 refs.</abstract><cop>Amsterdam</cop><pub>Elsevier</pub><doi>10.1016/S0167-577X(00)00106-3</doi><tpages>5</tpages></addata></record> |
| fulltext | fulltext |
| identifier | ISSN: 0167-577X |
| ispartof | Materials letters, 2000-09, Vol.45 (3-4), p.208-212 |
| issn | 0167-577X 1873-4979 |
| language | eng |
| recordid | cdi_proquest_miscellaneous_27763652 |
| source | Elsevier ScienceDirect Journals |
| subjects | Condensed matter: electronic structure, electrical, magnetic, and optical properties Dielectric thin films Dielectric, piezoelectric, ferroelectric and antiferroelectric materials Dielectrics, piezoelectrics, and ferroelectrics and their properties Exact sciences and technology Niobates, titanates, tantalates, pzt ceramics, etc Physics |
| title | Time dependence of electrical properties of SrBi2Ta2O9 thin films after top electrode annealing |
| url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-31T15%3A50%3A52IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-proquest_cross&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Time%20dependence%20of%20electrical%20properties%20of%20SrBi2Ta2O9%20thin%20films%20after%20top%20electrode%20annealing&rft.jtitle=Materials%20letters&rft.au=CHOI,%20G.-P&rft.date=2000-09-01&rft.volume=45&rft.issue=3-4&rft.spage=208&rft.epage=212&rft.pages=208-212&rft.issn=0167-577X&rft.eissn=1873-4979&rft.coden=MLETDJ&rft_id=info:doi/10.1016/S0167-577X(00)00106-3&rft_dat=%3Cproquest_cross%3E27763652%3C/proquest_cross%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_pqid=27763652&rft_id=info:pmid/&rfr_iscdi=true |