Synthesis of tantalum pentoxide films by pulsed laser deposition: material characterization and scale-up
Tantalum oxide (TaO x ) films were grown on silicon substrates using the pulsed laser deposition (PLD) technique. The beam of a KrF excimer laser was used to ablate Ta 2O 5 targets in an oxygen background gas. The composition, structure, and optical properties of the films were investigated as funct...
Gespeichert in:
| Veröffentlicht in: | Thin solid films 2000-01, Vol.358 (1), p.104-113 |
|---|---|
| Hauptverfasser: | , , , , |
| Format: | Artikel |
| Sprache: | eng |
| Schlagworte: | |
| Online-Zugang: | Volltext |
| Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
| container_end_page | 113 |
|---|---|
| container_issue | 1 |
| container_start_page | 104 |
| container_title | Thin solid films |
| container_volume | 358 |
| creator | Boughaba, S Sproule, G.I McCaffrey, J.P Islam, M Graham, M.J |
| description | Tantalum oxide (TaO
x
) films were grown on silicon substrates using the pulsed laser deposition (PLD) technique. The beam of a KrF excimer laser was used to ablate Ta
2O
5 targets in an oxygen background gas. The composition, structure, and optical properties of the films were investigated as functions of the O
2 pressure (1–40 mTorr) and substrate temperature (150–800°C). Stoichiometric Ta
2O
5 films were obtained, with indices of refraction higher than 2.15 and extinction coefficients less than 10
−4. Amorphous-like coatings were produced at deposition temperatures of 150, 250 and 400°C. At 650°C, a transition towards a polycrystalline structure was observed for O
2 pressures higher than 1 mTorr. This transition involved
β-Ta
2O
5 and an unidentified structure. At 800°C and an O
2 pressure higher than 20 mTorr,
β-Ta
2O
5 was the predominant phase. An investigation of the TaO
x
/silicon interface revealed the presence of an ultra-thin Ta-rich silicon oxide interlayer (∼2 nm) and a shallow Ta-rich silicon layer ( |
| doi_str_mv | 10.1016/S0040-6090(99)00703-8 |
| format | Article |
| fullrecord | <record><control><sourceid>proquest_cross</sourceid><recordid>TN_cdi_proquest_miscellaneous_27758594</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><els_id>S0040609099007038</els_id><sourcerecordid>27758594</sourcerecordid><originalsourceid>FETCH-LOGICAL-c432t-511609e6bc9af95cbf23b335efc0909fc882bd4e3844262d7192d0b0b0348fbf3</originalsourceid><addsrcrecordid>eNqFkMlKBDEQhoMoOC6PIOQgoofWLL0kXkTEDQQP6jmkkwoT6c0kLY5Pb7cjepQ6FEV9VX_Vj9ABJaeU0PLsiZCcZCWR5FjKE0IqwjOxgRZUVDJjFaebaPGLbKOdGF8JIZQxvkDLp1WXlhB9xL3DSXdJN2OLB-hS_-EtYOebNuJ6hYexiWBxoyMEbGHoo0--785xqxMErxtsljpoMxefem5h3VkcjW4gG4c9tOX0tGH_J--il5vr56u77OHx9v7q8iEzOWcpKyidroSyNlI7WZjaMV5zXoAz0_HSGSFYbXPgIs9ZyWxFJbOknoLnwtWO76Kj9d4h9G8jxKRaHw00je6gH6NiVVWIQuYTWKxBE_oYAzg1BN_qsFKUqNlX9e2rmk1TUqpvX5WY5g5_BPT8mwu6Mz7-DbOS5mLGLtYYTM--ewgqGg-dAesDmKRs7_8R-gIT044Z</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>27758594</pqid></control><display><type>article</type><title>Synthesis of tantalum pentoxide films by pulsed laser deposition: material characterization and scale-up</title><source>ScienceDirect Journals (5 years ago - present)</source><creator>Boughaba, S ; Sproule, G.I ; McCaffrey, J.P ; Islam, M ; Graham, M.J</creator><creatorcontrib>Boughaba, S ; Sproule, G.I ; McCaffrey, J.P ; Islam, M ; Graham, M.J</creatorcontrib><description>Tantalum oxide (TaO
x
) films were grown on silicon substrates using the pulsed laser deposition (PLD) technique. The beam of a KrF excimer laser was used to ablate Ta
2O
5 targets in an oxygen background gas. The composition, structure, and optical properties of the films were investigated as functions of the O
2 pressure (1–40 mTorr) and substrate temperature (150–800°C). Stoichiometric Ta
2O
5 films were obtained, with indices of refraction higher than 2.15 and extinction coefficients less than 10
−4. Amorphous-like coatings were produced at deposition temperatures of 150, 250 and 400°C. At 650°C, a transition towards a polycrystalline structure was observed for O
2 pressures higher than 1 mTorr. This transition involved
β-Ta
2O
5 and an unidentified structure. At 800°C and an O
2 pressure higher than 20 mTorr,
β-Ta
2O
5 was the predominant phase. An investigation of the TaO
x
/silicon interface revealed the presence of an ultra-thin Ta-rich silicon oxide interlayer (∼2 nm) and a shallow Ta-rich silicon layer (<2 nm) at the silicon substrate surface. Within the processing window that led to stoichiometric Ta
2O
5, films were deposited on 75 mm diameter silicon wafers. The coatings were found to be uniform over the entire area in terms of thickness, composition, structure, and optical properties.</description><identifier>ISSN: 0040-6090</identifier><identifier>EISSN: 1879-2731</identifier><identifier>DOI: 10.1016/S0040-6090(99)00703-8</identifier><identifier>CODEN: THSFAP</identifier><language>eng</language><publisher>Lausanne: Elsevier B.V</publisher><subject>Cross-disciplinary physics: materials science; rheology ; Deposition process ; Exact sciences and technology ; Laser ablation ; Laser deposition ; Materials science ; Methods of deposition of films and coatings; film growth and epitaxy ; Physics ; Pulsed laser deposition ; Ta 2O 5</subject><ispartof>Thin solid films, 2000-01, Vol.358 (1), p.104-113</ispartof><rights>2000 Elsevier Science S.A.</rights><rights>2000 INIST-CNRS</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c432t-511609e6bc9af95cbf23b335efc0909fc882bd4e3844262d7192d0b0b0348fbf3</citedby><cites>FETCH-LOGICAL-c432t-511609e6bc9af95cbf23b335efc0909fc882bd4e3844262d7192d0b0b0348fbf3</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://dx.doi.org/10.1016/S0040-6090(99)00703-8$$EHTML$$P50$$Gelsevier$$H</linktohtml><link.rule.ids>314,780,784,3548,27922,27923,45993</link.rule.ids><backlink>$$Uhttp://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&idt=1261488$$DView record in Pascal Francis$$Hfree_for_read</backlink></links><search><creatorcontrib>Boughaba, S</creatorcontrib><creatorcontrib>Sproule, G.I</creatorcontrib><creatorcontrib>McCaffrey, J.P</creatorcontrib><creatorcontrib>Islam, M</creatorcontrib><creatorcontrib>Graham, M.J</creatorcontrib><title>Synthesis of tantalum pentoxide films by pulsed laser deposition: material characterization and scale-up</title><title>Thin solid films</title><description>Tantalum oxide (TaO
x
) films were grown on silicon substrates using the pulsed laser deposition (PLD) technique. The beam of a KrF excimer laser was used to ablate Ta
2O
5 targets in an oxygen background gas. The composition, structure, and optical properties of the films were investigated as functions of the O
2 pressure (1–40 mTorr) and substrate temperature (150–800°C). Stoichiometric Ta
2O
5 films were obtained, with indices of refraction higher than 2.15 and extinction coefficients less than 10
−4. Amorphous-like coatings were produced at deposition temperatures of 150, 250 and 400°C. At 650°C, a transition towards a polycrystalline structure was observed for O
2 pressures higher than 1 mTorr. This transition involved
β-Ta
2O
5 and an unidentified structure. At 800°C and an O
2 pressure higher than 20 mTorr,
β-Ta
2O
5 was the predominant phase. An investigation of the TaO
x
/silicon interface revealed the presence of an ultra-thin Ta-rich silicon oxide interlayer (∼2 nm) and a shallow Ta-rich silicon layer (<2 nm) at the silicon substrate surface. Within the processing window that led to stoichiometric Ta
2O
5, films were deposited on 75 mm diameter silicon wafers. The coatings were found to be uniform over the entire area in terms of thickness, composition, structure, and optical properties.</description><subject>Cross-disciplinary physics: materials science; rheology</subject><subject>Deposition process</subject><subject>Exact sciences and technology</subject><subject>Laser ablation</subject><subject>Laser deposition</subject><subject>Materials science</subject><subject>Methods of deposition of films and coatings; film growth and epitaxy</subject><subject>Physics</subject><subject>Pulsed laser deposition</subject><subject>Ta 2O 5</subject><issn>0040-6090</issn><issn>1879-2731</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2000</creationdate><recordtype>article</recordtype><recordid>eNqFkMlKBDEQhoMoOC6PIOQgoofWLL0kXkTEDQQP6jmkkwoT6c0kLY5Pb7cjepQ6FEV9VX_Vj9ABJaeU0PLsiZCcZCWR5FjKE0IqwjOxgRZUVDJjFaebaPGLbKOdGF8JIZQxvkDLp1WXlhB9xL3DSXdJN2OLB-hS_-EtYOebNuJ6hYexiWBxoyMEbGHoo0--785xqxMErxtsljpoMxefem5h3VkcjW4gG4c9tOX0tGH_J--il5vr56u77OHx9v7q8iEzOWcpKyidroSyNlI7WZjaMV5zXoAz0_HSGSFYbXPgIs9ZyWxFJbOknoLnwtWO76Kj9d4h9G8jxKRaHw00je6gH6NiVVWIQuYTWKxBE_oYAzg1BN_qsFKUqNlX9e2rmk1TUqpvX5WY5g5_BPT8mwu6Mz7-DbOS5mLGLtYYTM--ewgqGg-dAesDmKRs7_8R-gIT044Z</recordid><startdate>20000101</startdate><enddate>20000101</enddate><creator>Boughaba, S</creator><creator>Sproule, G.I</creator><creator>McCaffrey, J.P</creator><creator>Islam, M</creator><creator>Graham, M.J</creator><general>Elsevier B.V</general><general>Elsevier Science</general><scope>IQODW</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7U5</scope><scope>8FD</scope><scope>L7M</scope></search><sort><creationdate>20000101</creationdate><title>Synthesis of tantalum pentoxide films by pulsed laser deposition: material characterization and scale-up</title><author>Boughaba, S ; Sproule, G.I ; McCaffrey, J.P ; Islam, M ; Graham, M.J</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c432t-511609e6bc9af95cbf23b335efc0909fc882bd4e3844262d7192d0b0b0348fbf3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2000</creationdate><topic>Cross-disciplinary physics: materials science; rheology</topic><topic>Deposition process</topic><topic>Exact sciences and technology</topic><topic>Laser ablation</topic><topic>Laser deposition</topic><topic>Materials science</topic><topic>Methods of deposition of films and coatings; film growth and epitaxy</topic><topic>Physics</topic><topic>Pulsed laser deposition</topic><topic>Ta 2O 5</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Boughaba, S</creatorcontrib><creatorcontrib>Sproule, G.I</creatorcontrib><creatorcontrib>McCaffrey, J.P</creatorcontrib><creatorcontrib>Islam, M</creatorcontrib><creatorcontrib>Graham, M.J</creatorcontrib><collection>Pascal-Francis</collection><collection>CrossRef</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>Technology Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>Thin solid films</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Boughaba, S</au><au>Sproule, G.I</au><au>McCaffrey, J.P</au><au>Islam, M</au><au>Graham, M.J</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Synthesis of tantalum pentoxide films by pulsed laser deposition: material characterization and scale-up</atitle><jtitle>Thin solid films</jtitle><date>2000-01-01</date><risdate>2000</risdate><volume>358</volume><issue>1</issue><spage>104</spage><epage>113</epage><pages>104-113</pages><issn>0040-6090</issn><eissn>1879-2731</eissn><coden>THSFAP</coden><abstract>Tantalum oxide (TaO
x
) films were grown on silicon substrates using the pulsed laser deposition (PLD) technique. The beam of a KrF excimer laser was used to ablate Ta
2O
5 targets in an oxygen background gas. The composition, structure, and optical properties of the films were investigated as functions of the O
2 pressure (1–40 mTorr) and substrate temperature (150–800°C). Stoichiometric Ta
2O
5 films were obtained, with indices of refraction higher than 2.15 and extinction coefficients less than 10
−4. Amorphous-like coatings were produced at deposition temperatures of 150, 250 and 400°C. At 650°C, a transition towards a polycrystalline structure was observed for O
2 pressures higher than 1 mTorr. This transition involved
β-Ta
2O
5 and an unidentified structure. At 800°C and an O
2 pressure higher than 20 mTorr,
β-Ta
2O
5 was the predominant phase. An investigation of the TaO
x
/silicon interface revealed the presence of an ultra-thin Ta-rich silicon oxide interlayer (∼2 nm) and a shallow Ta-rich silicon layer (<2 nm) at the silicon substrate surface. Within the processing window that led to stoichiometric Ta
2O
5, films were deposited on 75 mm diameter silicon wafers. The coatings were found to be uniform over the entire area in terms of thickness, composition, structure, and optical properties.</abstract><cop>Lausanne</cop><pub>Elsevier B.V</pub><doi>10.1016/S0040-6090(99)00703-8</doi><tpages>10</tpages></addata></record> |
| fulltext | fulltext |
| identifier | ISSN: 0040-6090 |
| ispartof | Thin solid films, 2000-01, Vol.358 (1), p.104-113 |
| issn | 0040-6090 1879-2731 |
| language | eng |
| recordid | cdi_proquest_miscellaneous_27758594 |
| source | ScienceDirect Journals (5 years ago - present) |
| subjects | Cross-disciplinary physics: materials science rheology Deposition process Exact sciences and technology Laser ablation Laser deposition Materials science Methods of deposition of films and coatings film growth and epitaxy Physics Pulsed laser deposition Ta 2O 5 |
| title | Synthesis of tantalum pentoxide films by pulsed laser deposition: material characterization and scale-up |
| url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-14T13%3A39%3A27IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-proquest_cross&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Synthesis%20of%20tantalum%20pentoxide%20films%20by%20pulsed%20laser%20deposition:%20material%20characterization%20and%20scale-up&rft.jtitle=Thin%20solid%20films&rft.au=Boughaba,%20S&rft.date=2000-01-01&rft.volume=358&rft.issue=1&rft.spage=104&rft.epage=113&rft.pages=104-113&rft.issn=0040-6090&rft.eissn=1879-2731&rft.coden=THSFAP&rft_id=info:doi/10.1016/S0040-6090(99)00703-8&rft_dat=%3Cproquest_cross%3E27758594%3C/proquest_cross%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_pqid=27758594&rft_id=info:pmid/&rft_els_id=S0040609099007038&rfr_iscdi=true |