Thermal modelling of RTP and RTCVD processes

Thermal modelling of RTP and RTCVD processes

The paper gives an overview of state of the art models and techniques for simulation of thermal effects in RTP, RTCVD and CVD reactors. The methods are exemplified with recent applications. The examples include the investigation of susceptively-heated single wafer reactors including effects related...

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Veröffentlicht in:Thin solid films 2000-04, Vol.365 (2), p.307-321
Hauptverfasser: Kersch, A., Schafbauer, T.
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Sprache:eng
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Rapid thermal chemical vapour deposition
Rapid thermal processing
Thermal modelling
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creator Kersch, A.
Schafbauer, T.
description The paper gives an overview of state of the art models and techniques for simulation of thermal effects in RTP, RTCVD and CVD reactors. The methods are exemplified with recent applications. The examples include the investigation of susceptively-heated single wafer reactors including effects related to optical properties of the wafer. Natural convection and wafer rotation are discussed in a further example. The steady state and transient uniformity control in a RTP system is treated together with a method to supplement simulation with experimental data. As a recent topic the thermal and gravitational stress in 300 mm wafer is discussed.
doi_str_mv 10.1016/S0040-6090(99)01050-0
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fullrecord <record><control><sourceid>proquest_cross</sourceid><recordid>TN_cdi_proquest_miscellaneous_27746575</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><els_id>S0040609099010500</els_id><sourcerecordid>27746575</sourcerecordid><originalsourceid>FETCH-LOGICAL-c338t-41bc435a8fda40a7d796eef99b4fbe1951ef9cbbff17ff4b32ba7816add70c133</originalsourceid><addsrcrecordid>eNqFUNtKAzEUDKJgrX6CsE-i4OrJZnezeRKpVygoWn0NuZxoZC81aQX_3rQVX30aBmbmnBlCDimcUaD1-TNACXkNAo6FOAEKFeSwRUa04SIvOKPbZPQn2SV7MX4AAC0KNiKns3cMnWqzbrDYtr5_ywaXPc0eM9XbhJPXq2weBoMxYtwnO061EQ9-cUxebq5nk7t8-nB7P7mc5oaxZpGXVJuSVapxVpWguOWiRnRC6NJppKKiiRitnaPcuVKzQive0FpZy8FQxsbkaJObLn8uMS5k56NJ76keh2WUBedlXfEqCauN0IQhxoBOzoPvVPiWFORqG7neRq6KSyHkehsJyXex8WFq8eUxyGg89gatD2gW0g7-n4QfBc5qgA</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>27746575</pqid></control><display><type>article</type><title>Thermal modelling of RTP and RTCVD processes</title><source>Elsevier ScienceDirect Journals</source><creator>Kersch, A. ; Schafbauer, T.</creator><creatorcontrib>Kersch, A. ; Schafbauer, T.</creatorcontrib><description>The paper gives an overview of state of the art models and techniques for simulation of thermal effects in RTP, RTCVD and CVD reactors. The methods are exemplified with recent applications. The examples include the investigation of susceptively-heated single wafer reactors including effects related to optical properties of the wafer. Natural convection and wafer rotation are discussed in a further example. The steady state and transient uniformity control in a RTP system is treated together with a method to supplement simulation with experimental data. As a recent topic the thermal and gravitational stress in 300 mm wafer is discussed.</description><identifier>ISSN: 0040-6090</identifier><identifier>EISSN: 1879-2731</identifier><identifier>DOI: 10.1016/S0040-6090(99)01050-0</identifier><language>eng</language><publisher>Elsevier B.V</publisher><subject>Rapid thermal chemical vapour deposition ; Rapid thermal processing ; Thermal modelling</subject><ispartof>Thin solid films, 2000-04, Vol.365 (2), p.307-321</ispartof><rights>2000 Elsevier Science S.A.</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c338t-41bc435a8fda40a7d796eef99b4fbe1951ef9cbbff17ff4b32ba7816add70c133</citedby><cites>FETCH-LOGICAL-c338t-41bc435a8fda40a7d796eef99b4fbe1951ef9cbbff17ff4b32ba7816add70c133</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://dx.doi.org/10.1016/S0040-6090(99)01050-0$$EHTML$$P50$$Gelsevier$$H</linktohtml><link.rule.ids>314,776,780,3536,27903,27904,45974</link.rule.ids></links><search><creatorcontrib>Kersch, A.</creatorcontrib><creatorcontrib>Schafbauer, T.</creatorcontrib><title>Thermal modelling of RTP and RTCVD processes</title><title>Thin solid films</title><description>The paper gives an overview of state of the art models and techniques for simulation of thermal effects in RTP, RTCVD and CVD reactors. The methods are exemplified with recent applications. The examples include the investigation of susceptively-heated single wafer reactors including effects related to optical properties of the wafer. Natural convection and wafer rotation are discussed in a further example. The steady state and transient uniformity control in a RTP system is treated together with a method to supplement simulation with experimental data. As a recent topic the thermal and gravitational stress in 300 mm wafer is discussed.</description><subject>Rapid thermal chemical vapour deposition</subject><subject>Rapid thermal processing</subject><subject>Thermal modelling</subject><issn>0040-6090</issn><issn>1879-2731</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2000</creationdate><recordtype>article</recordtype><recordid>eNqFUNtKAzEUDKJgrX6CsE-i4OrJZnezeRKpVygoWn0NuZxoZC81aQX_3rQVX30aBmbmnBlCDimcUaD1-TNACXkNAo6FOAEKFeSwRUa04SIvOKPbZPQn2SV7MX4AAC0KNiKns3cMnWqzbrDYtr5_ywaXPc0eM9XbhJPXq2weBoMxYtwnO061EQ9-cUxebq5nk7t8-nB7P7mc5oaxZpGXVJuSVapxVpWguOWiRnRC6NJppKKiiRitnaPcuVKzQive0FpZy8FQxsbkaJObLn8uMS5k56NJ76keh2WUBedlXfEqCauN0IQhxoBOzoPvVPiWFORqG7neRq6KSyHkehsJyXex8WFq8eUxyGg89gatD2gW0g7-n4QfBc5qgA</recordid><startdate>20000417</startdate><enddate>20000417</enddate><creator>Kersch, A.</creator><creator>Schafbauer, T.</creator><general>Elsevier B.V</general><scope>AAYXX</scope><scope>CITATION</scope><scope>7SP</scope><scope>7U5</scope><scope>8FD</scope><scope>L7M</scope></search><sort><creationdate>20000417</creationdate><title>Thermal modelling of RTP and RTCVD processes</title><author>Kersch, A. ; Schafbauer, T.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c338t-41bc435a8fda40a7d796eef99b4fbe1951ef9cbbff17ff4b32ba7816add70c133</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2000</creationdate><topic>Rapid thermal chemical vapour deposition</topic><topic>Rapid thermal processing</topic><topic>Thermal modelling</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Kersch, A.</creatorcontrib><creatorcontrib>Schafbauer, T.</creatorcontrib><collection>CrossRef</collection><collection>Electronics &amp; Communications Abstracts</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>Technology Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>Thin solid films</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Kersch, A.</au><au>Schafbauer, T.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Thermal modelling of RTP and RTCVD processes</atitle><jtitle>Thin solid films</jtitle><date>2000-04-17</date><risdate>2000</risdate><volume>365</volume><issue>2</issue><spage>307</spage><epage>321</epage><pages>307-321</pages><issn>0040-6090</issn><eissn>1879-2731</eissn><abstract>The paper gives an overview of state of the art models and techniques for simulation of thermal effects in RTP, RTCVD and CVD reactors. The methods are exemplified with recent applications. The examples include the investigation of susceptively-heated single wafer reactors including effects related to optical properties of the wafer. Natural convection and wafer rotation are discussed in a further example. The steady state and transient uniformity control in a RTP system is treated together with a method to supplement simulation with experimental data. As a recent topic the thermal and gravitational stress in 300 mm wafer is discussed.</abstract><pub>Elsevier B.V</pub><doi>10.1016/S0040-6090(99)01050-0</doi><tpages>15</tpages></addata></record>
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subjects Rapid thermal chemical vapour deposition
Rapid thermal processing
Thermal modelling
title Thermal modelling of RTP and RTCVD processes
url https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-21T10%3A58%3A03IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-proquest_cross&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Thermal%20modelling%20of%20RTP%20and%20RTCVD%20processes&rft.jtitle=Thin%20solid%20films&rft.au=Kersch,%20A.&rft.date=2000-04-17&rft.volume=365&rft.issue=2&rft.spage=307&rft.epage=321&rft.pages=307-321&rft.issn=0040-6090&rft.eissn=1879-2731&rft_id=info:doi/10.1016/S0040-6090(99)01050-0&rft_dat=%3Cproquest_cross%3E27746575%3C/proquest_cross%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_pqid=27746575&rft_id=info:pmid/&rft_els_id=S0040609099010500&rfr_iscdi=true