STABILITY OF TWO-STEP-GROWTH Bi2Sr2CuOx FILMS ON Si(001) USING SrO BUFFER LAYER

STABILITY OF TWO-STEP-GROWTH Bi2Sr2CuOx FILMS ON Si(001) USING SrO BUFFER LAYER

Authors studied the growth conditions of high-quality crystalline Bi2Sr2CuOx films on a Si(001)-2x1 substrate using MBE. A buffer layer of SrO, heteroepitaxially grown at 350 C, is used between Bi2Sr2CuOx films and the Si substrate. The Bi2Sr2CuOx films are grown at different temperatures. Among the...

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Veröffentlicht in:Jpn.J.Appl.Phys ,Part 1. Vol. 41, no. 1, pp. 83-85. 2002 Part 1. Vol. 41, no. 1, pp. 83-85. 2002, 2002-01, Vol.41 (1), p.83-85
Hauptverfasser: Tambo, T, Shimizu, A, Matsuda, A, Tatsuyama, C
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container_title Jpn.J.Appl.Phys ,Part 1. Vol. 41, no. 1, pp. 83-85. 2002
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creator Tambo, T
Shimizu, A
Matsuda, A
Tatsuyama, C
description Authors studied the growth conditions of high-quality crystalline Bi2Sr2CuOx films on a Si(001)-2x1 substrate using MBE. A buffer layer of SrO, heteroepitaxially grown at 350 C, is used between Bi2Sr2CuOx films and the Si substrate. The Bi2Sr2CuOx films are grown at different temperatures. Among them, the film grown at 600 C shows good crystal structure, but degradation of the crystal structure is observed in an XRD pattern when the film is left in air. The film grown at 650 C shows a bad crystalline structure, but the film is not degraded in air. Films grown by two-step growth with two different growth temperatures, however, have good crystal structures and are not degraded in air. The cause of film degradation is discussed. 23 refs.
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