Study of the irradiation damage in SiC by ion channeling
The importance of silicon carbide as a wide band gap semiconductor is widely accepted and well documented. Its excellent physical properties (chemical inertness, high-temperature strength, low thermal expansion, extreme hardness) make it the most promising substitute for traditional semiconductors,...
Gespeichert in:
| Veröffentlicht in: | Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms Beam interactions with materials and atoms, 2002-04, Vol.188 (1), p.78-83 |
|---|---|
| Hauptverfasser: | , , , , , , |
| Format: | Artikel |
| Sprache: | eng |
| Schlagworte: | |
| Online-Zugang: | Volltext |
| Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
| container_end_page | 83 |
|---|---|
| container_issue | 1 |
| container_start_page | 78 |
| container_title | Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms |
| container_volume | 188 |
| creator | Kokkoris, M. Kossionides, S. Kyriakis, A. Zachariadou, K. Fanourakis, G. Vlastou, R. Paradellis, Th |
| description | The importance of silicon carbide as a wide band gap semiconductor is widely accepted and well documented. Its excellent physical properties (chemical inertness, high-temperature strength, low thermal expansion, extreme hardness) make it the most promising substitute for traditional semiconductors, especially when high-temperature, high-voltage power, and high-frequency devices are concerned.
In the present work, the gradual amorphization of a SiC Lely (21R) crystal when irradiated with 8 MeV
7Li ions in a random direction up to a maximum dose of approximately 1×10
16 particles/cm
2, is being studied, using the progressive change of channeling parameters for different depths. The results refer to the energy region of ∼1 MeV/nucleon, and an attempt is made in order to explain the peculiarities of the experimental spectra and the mechanism of defect production in SiC. As in previous studies, a change in color was observed after irradiation in the random mode, indicating that the problem of irradiation damage in SiC caused by light ion beams needs further investigation. |
| doi_str_mv | 10.1016/S0168-583X(01)01022-9 |
| format | Article |
| fullrecord | <record><control><sourceid>proquest_cross</sourceid><recordid>TN_cdi_proquest_miscellaneous_27736006</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><els_id>S0168583X01010229</els_id><sourcerecordid>27736006</sourcerecordid><originalsourceid>FETCH-LOGICAL-c338t-ddf3004ab3a8d3b7b932afc7d19dc181d48011a5bb91d79657767598b6dadbda3</originalsourceid><addsrcrecordid>eNqFkE1LAzEQhoMoWD9-gpCT6GE12TSb5CRS_IKChyp4C0km20a22Zpshf5701a8OoeZ4eWdF-ZB6IKSG0poczsrTVZcso8rQq8JJXVdqQM0olKUhcvxIRr9WY7RSc6fpBRnfITkbFjDBvctHhYeh5QMBDOEPmIwSzMvUsSzMMF2g7eiW5gYfRfi_AwdtabL_vx3nqL3x4e3yXM1fX16mdxPK8eYHCqAlhEyNpYZCcwKq1htWieAKnBUUhhLQqnh1ioKQjVciEZwJW0DBiwYdoou97mr1H-tfR70MmTnu85E36-zroVgDSFNMfK90aU-5-RbvUphadJGU6K3nPSOk95C0ITqHSetyt3d_s6XL76DTzq74KPzEJJ3g4Y-_JPwA3WSbyk</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>27736006</pqid></control><display><type>article</type><title>Study of the irradiation damage in SiC by ion channeling</title><source>Access via ScienceDirect (Elsevier)</source><creator>Kokkoris, M. ; Kossionides, S. ; Kyriakis, A. ; Zachariadou, K. ; Fanourakis, G. ; Vlastou, R. ; Paradellis, Th</creator><creatorcontrib>Kokkoris, M. ; Kossionides, S. ; Kyriakis, A. ; Zachariadou, K. ; Fanourakis, G. ; Vlastou, R. ; Paradellis, Th</creatorcontrib><description>The importance of silicon carbide as a wide band gap semiconductor is widely accepted and well documented. Its excellent physical properties (chemical inertness, high-temperature strength, low thermal expansion, extreme hardness) make it the most promising substitute for traditional semiconductors, especially when high-temperature, high-voltage power, and high-frequency devices are concerned.
In the present work, the gradual amorphization of a SiC Lely (21R) crystal when irradiated with 8 MeV
7Li ions in a random direction up to a maximum dose of approximately 1×10
16 particles/cm
2, is being studied, using the progressive change of channeling parameters for different depths. The results refer to the energy region of ∼1 MeV/nucleon, and an attempt is made in order to explain the peculiarities of the experimental spectra and the mechanism of defect production in SiC. As in previous studies, a change in color was observed after irradiation in the random mode, indicating that the problem of irradiation damage in SiC caused by light ion beams needs further investigation.</description><identifier>ISSN: 0168-583X</identifier><identifier>EISSN: 1872-9584</identifier><identifier>DOI: 10.1016/S0168-583X(01)01022-9</identifier><language>eng</language><publisher>Elsevier B.V</publisher><subject>Backscattering ; Channeling ; Lely ; Lithium ; RBS ; SiC crystal</subject><ispartof>Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 2002-04, Vol.188 (1), p.78-83</ispartof><rights>2002 Elsevier Science B.V.</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c338t-ddf3004ab3a8d3b7b932afc7d19dc181d48011a5bb91d79657767598b6dadbda3</citedby><cites>FETCH-LOGICAL-c338t-ddf3004ab3a8d3b7b932afc7d19dc181d48011a5bb91d79657767598b6dadbda3</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://dx.doi.org/10.1016/S0168-583X(01)01022-9$$EHTML$$P50$$Gelsevier$$H</linktohtml><link.rule.ids>315,781,785,3551,27929,27930,46000</link.rule.ids></links><search><creatorcontrib>Kokkoris, M.</creatorcontrib><creatorcontrib>Kossionides, S.</creatorcontrib><creatorcontrib>Kyriakis, A.</creatorcontrib><creatorcontrib>Zachariadou, K.</creatorcontrib><creatorcontrib>Fanourakis, G.</creatorcontrib><creatorcontrib>Vlastou, R.</creatorcontrib><creatorcontrib>Paradellis, Th</creatorcontrib><title>Study of the irradiation damage in SiC by ion channeling</title><title>Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms</title><description>The importance of silicon carbide as a wide band gap semiconductor is widely accepted and well documented. Its excellent physical properties (chemical inertness, high-temperature strength, low thermal expansion, extreme hardness) make it the most promising substitute for traditional semiconductors, especially when high-temperature, high-voltage power, and high-frequency devices are concerned.
In the present work, the gradual amorphization of a SiC Lely (21R) crystal when irradiated with 8 MeV
7Li ions in a random direction up to a maximum dose of approximately 1×10
16 particles/cm
2, is being studied, using the progressive change of channeling parameters for different depths. The results refer to the energy region of ∼1 MeV/nucleon, and an attempt is made in order to explain the peculiarities of the experimental spectra and the mechanism of defect production in SiC. As in previous studies, a change in color was observed after irradiation in the random mode, indicating that the problem of irradiation damage in SiC caused by light ion beams needs further investigation.</description><subject>Backscattering</subject><subject>Channeling</subject><subject>Lely</subject><subject>Lithium</subject><subject>RBS</subject><subject>SiC crystal</subject><issn>0168-583X</issn><issn>1872-9584</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2002</creationdate><recordtype>article</recordtype><recordid>eNqFkE1LAzEQhoMoWD9-gpCT6GE12TSb5CRS_IKChyp4C0km20a22Zpshf5701a8OoeZ4eWdF-ZB6IKSG0poczsrTVZcso8rQq8JJXVdqQM0olKUhcvxIRr9WY7RSc6fpBRnfITkbFjDBvctHhYeh5QMBDOEPmIwSzMvUsSzMMF2g7eiW5gYfRfi_AwdtabL_vx3nqL3x4e3yXM1fX16mdxPK8eYHCqAlhEyNpYZCcwKq1htWieAKnBUUhhLQqnh1ioKQjVciEZwJW0DBiwYdoou97mr1H-tfR70MmTnu85E36-zroVgDSFNMfK90aU-5-RbvUphadJGU6K3nPSOk95C0ITqHSetyt3d_s6XL76DTzq74KPzEJJ3g4Y-_JPwA3WSbyk</recordid><startdate>20020401</startdate><enddate>20020401</enddate><creator>Kokkoris, M.</creator><creator>Kossionides, S.</creator><creator>Kyriakis, A.</creator><creator>Zachariadou, K.</creator><creator>Fanourakis, G.</creator><creator>Vlastou, R.</creator><creator>Paradellis, Th</creator><general>Elsevier B.V</general><scope>AAYXX</scope><scope>CITATION</scope><scope>7SR</scope><scope>8FD</scope><scope>JG9</scope></search><sort><creationdate>20020401</creationdate><title>Study of the irradiation damage in SiC by ion channeling</title><author>Kokkoris, M. ; Kossionides, S. ; Kyriakis, A. ; Zachariadou, K. ; Fanourakis, G. ; Vlastou, R. ; Paradellis, Th</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c338t-ddf3004ab3a8d3b7b932afc7d19dc181d48011a5bb91d79657767598b6dadbda3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2002</creationdate><topic>Backscattering</topic><topic>Channeling</topic><topic>Lely</topic><topic>Lithium</topic><topic>RBS</topic><topic>SiC crystal</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Kokkoris, M.</creatorcontrib><creatorcontrib>Kossionides, S.</creatorcontrib><creatorcontrib>Kyriakis, A.</creatorcontrib><creatorcontrib>Zachariadou, K.</creatorcontrib><creatorcontrib>Fanourakis, G.</creatorcontrib><creatorcontrib>Vlastou, R.</creatorcontrib><creatorcontrib>Paradellis, Th</creatorcontrib><collection>CrossRef</collection><collection>Engineered Materials Abstracts</collection><collection>Technology Research Database</collection><collection>Materials Research Database</collection><jtitle>Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Kokkoris, M.</au><au>Kossionides, S.</au><au>Kyriakis, A.</au><au>Zachariadou, K.</au><au>Fanourakis, G.</au><au>Vlastou, R.</au><au>Paradellis, Th</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Study of the irradiation damage in SiC by ion channeling</atitle><jtitle>Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms</jtitle><date>2002-04-01</date><risdate>2002</risdate><volume>188</volume><issue>1</issue><spage>78</spage><epage>83</epage><pages>78-83</pages><issn>0168-583X</issn><eissn>1872-9584</eissn><abstract>The importance of silicon carbide as a wide band gap semiconductor is widely accepted and well documented. Its excellent physical properties (chemical inertness, high-temperature strength, low thermal expansion, extreme hardness) make it the most promising substitute for traditional semiconductors, especially when high-temperature, high-voltage power, and high-frequency devices are concerned.
In the present work, the gradual amorphization of a SiC Lely (21R) crystal when irradiated with 8 MeV
7Li ions in a random direction up to a maximum dose of approximately 1×10
16 particles/cm
2, is being studied, using the progressive change of channeling parameters for different depths. The results refer to the energy region of ∼1 MeV/nucleon, and an attempt is made in order to explain the peculiarities of the experimental spectra and the mechanism of defect production in SiC. As in previous studies, a change in color was observed after irradiation in the random mode, indicating that the problem of irradiation damage in SiC caused by light ion beams needs further investigation.</abstract><pub>Elsevier B.V</pub><doi>10.1016/S0168-583X(01)01022-9</doi><tpages>6</tpages></addata></record> |
| fulltext | fulltext |
| identifier | ISSN: 0168-583X |
| ispartof | Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 2002-04, Vol.188 (1), p.78-83 |
| issn | 0168-583X 1872-9584 |
| language | eng |
| recordid | cdi_proquest_miscellaneous_27736006 |
| source | Access via ScienceDirect (Elsevier) |
| subjects | Backscattering Channeling Lely Lithium RBS SiC crystal |
| title | Study of the irradiation damage in SiC by ion channeling |
| url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2024-12-12T21%3A06%3A51IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-proquest_cross&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Study%20of%20the%20irradiation%20damage%20in%20SiC%20by%20ion%20channeling&rft.jtitle=Nuclear%20instruments%20&%20methods%20in%20physics%20research.%20Section%20B,%20Beam%20interactions%20with%20materials%20and%20atoms&rft.au=Kokkoris,%20M.&rft.date=2002-04-01&rft.volume=188&rft.issue=1&rft.spage=78&rft.epage=83&rft.pages=78-83&rft.issn=0168-583X&rft.eissn=1872-9584&rft_id=info:doi/10.1016/S0168-583X(01)01022-9&rft_dat=%3Cproquest_cross%3E27736006%3C/proquest_cross%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_pqid=27736006&rft_id=info:pmid/&rft_els_id=S0168583X01010229&rfr_iscdi=true |