Visible and infrared photodiode based on γ-InSe/Ge van der Waals heterojunction for polarized detection and imaging

Broadband photodetectors are a category of optoelectronic devices that have important applications in modern communication information. γ-InSe is a newly developed two-dimensional (2D) layered semiconductor with an air-stable and low-symmetry crystal structure that is suitable for polarization-sensi...

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Veröffentlicht in:	Nanoscale 2023-02, Vol.15 (7), p.352-3531
Hauptverfasser:	Yang, Baoxiang, Gao, Wei, Li, Hengyi, Gao, Peng, Yang, Mengmeng, Pan, Yuan, Wang, Chuanglei, Yang, Yani, Huo, Nengjie, Zheng, Zhaoqiang, Li, Jingbo
Format:	Artikel
Sprache:	eng
Schlagworte:	Black body radiation Broadband Crystal structure Dark current Dichroism Electric fields Heterojunctions Image resolution Indium selenides Infrared radiation Optoelectronic devices Photodiodes Photoelectric effect Polarization Room temperature Separation
Online-Zugang:	Volltext
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