Temperature dependent Raman and photoluminescence of vertical WS2/MoS2 monolayer heterostructures
Heterostructures from two-dimensional transition-metal dichalcogenides MX2 have emerged as a hot topic in recent years due to their various fascinating properties. Here, we investigated the temperature dependent Raman and photoluminescence（PL） spectra in vertical stacked WS2/MoS2 monolayer heterostr...
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| Veröffentlicht in: | Science bulletin 2017-01, Vol.62 (1), p.16-21 |
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| container_title | Science bulletin |
| container_volume | 62 |
| creator | Hu, Zhijian Bao, Yanjun Li, Ziwei Gong, Yongji Feng, Rui Xiao, Yingdong Wu, Xiaochun Zhang, Zhaohui Zhu, Xing Ajayan, Pulickel M. Fang, Zheyu |
| description | Heterostructures from two-dimensional transition-metal dichalcogenides MX2 have emerged as a hot topic in recent years due to their various fascinating properties. Here, we investigated the temperature dependent Raman and photoluminescence（PL） spectra in vertical stacked WS2/MoS2 monolayer heterostructures. Our result shows that both E2g1 and A1g modes of WS2 and MoS2 vary linearly with temperature increasing from 300 to 642 K. The PL measurement also reveals strong temperature dependencies of the PL intensity and peak position. The activation energy of the thermal quenching of the PL emission has been found to be equal to 69.6 meV. The temperature dependence of the peak energy well follows the bandgap shrinkage of bulk semiconductor. |
| doi_str_mv | 10.1016/j.scib.2016.11.002 |
| format | Article |
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Here, we investigated the temperature dependent Raman and photoluminescence（PL） spectra in vertical stacked WS2/MoS2 monolayer heterostructures. Our result shows that both E2g1 and A1g modes of WS2 and MoS2 vary linearly with temperature increasing from 300 to 642 K. The PL measurement also reveals strong temperature dependencies of the PL intensity and peak position. The activation energy of the thermal quenching of the PL emission has been found to be equal to 69.6 meV. 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Here, we investigated the temperature dependent Raman and photoluminescence（PL） spectra in vertical stacked WS2/MoS2 monolayer heterostructures. Our result shows that both E2g1 and A1g modes of WS2 and MoS2 vary linearly with temperature increasing from 300 to 642 K. The PL measurement also reveals strong temperature dependencies of the PL intensity and peak position. The activation energy of the thermal quenching of the PL emission has been found to be equal to 69.6 meV. 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Here, we investigated the temperature dependent Raman and photoluminescence（PL） spectra in vertical stacked WS2/MoS2 monolayer heterostructures. Our result shows that both E2g1 and A1g modes of WS2 and MoS2 vary linearly with temperature increasing from 300 to 642 K. The PL measurement also reveals strong temperature dependencies of the PL intensity and peak position. The activation energy of the thermal quenching of the PL emission has been found to be equal to 69.6 meV. The temperature dependence of the peak energy well follows the bandgap shrinkage of bulk semiconductor.</abstract><pub>Elsevier B.V</pub><doi>10.1016/j.scib.2016.11.002</doi><tpages>6</tpages></addata></record> |
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| language | eng |
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| source | Alma/SFX Local Collection |
| subjects | Heterostructures Photoluminescence Raman spectra Temperature-dependent Transition metal dichalcogenides |
| title | Temperature dependent Raman and photoluminescence of vertical WS2/MoS2 monolayer heterostructures |
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