SIMS characterisation of chemical solution deposited thin film systems of BaTiO sub(3)/X (X = LaNiO sub(3), La sub(0.5)Sr sub(0.5)CoO sub(3), La sub(0.7)Sr sub(0.3 )MnO sub(3)) on a platinised silicon wafer

SIMS characterisation of chemical solution deposited thin film systems of BaTiO sub(3)/X (X = LaNiO sub(3), La sub(0.5)Sr sub(0.5)CoO sub(3), La sub(0.7)Sr sub(0.3 )MnO sub(3)) on a platinised silicon wafer

Chemical solution deposited multilayer systems of BaTiO sub(3)/X/Pt /TiO sub(2 )/SiO sub(2)/Si (where X = LaNiO sub(3), La sub(0.5)Sr sub(0.5)CoO sub(3), La sub(0.7)Sr sub(0.3)MnO sub(3)) were investigated by dynamic SIMS (Secondary Ion Mass Spectroscopy). The BaTiO sub(3) layer is intended to serve...

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Veröffentlicht in:Thin solid films 2002-02, Vol.405, p.218-223
Hauptverfasser: Pollak, C, Busic, A, Reichmann, K, Hutter, H
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Reichmann, K
Hutter, H
description Chemical solution deposited multilayer systems of BaTiO sub(3)/X/Pt /TiO sub(2 )/SiO sub(2)/Si (where X = LaNiO sub(3), La sub(0.5)Sr sub(0.5)CoO sub(3), La sub(0.7)Sr sub(0.3)MnO sub(3)) were investigated by dynamic SIMS (Secondary Ion Mass Spectroscopy). The BaTiO sub(3) layer is intended to serve as a dielectric layer for a capacitor and the conducting layer 'X' is a buffer layer intended to eliminate fatigue effects, which usually occur at the Pt/BaTiO sub(3) interface. Depth profiles of the main components were obtained revealing intense diffusion processes, which must have occurred during the deposition /crystallisation processes. Sr impurities were detected in the BaTiO sub(3) layer originating most probably from the BaTiO sub(3) precursor solution. copyright 2002 Elsevier Science B.V. All rights reserved.
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The BaTiO sub(3) layer is intended to serve as a dielectric layer for a capacitor and the conducting layer 'X' is a buffer layer intended to eliminate fatigue effects, which usually occur at the Pt/BaTiO sub(3) interface. Depth profiles of the main components were obtained revealing intense diffusion processes, which must have occurred during the deposition /crystallisation processes. Sr impurities were detected in the BaTiO sub(3) layer originating most probably from the BaTiO sub(3) precursor solution. copyright 2002 Elsevier Science B.V. 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The BaTiO sub(3) layer is intended to serve as a dielectric layer for a capacitor and the conducting layer 'X' is a buffer layer intended to eliminate fatigue effects, which usually occur at the Pt/BaTiO sub(3) interface. Depth profiles of the main components were obtained revealing intense diffusion processes, which must have occurred during the deposition /crystallisation processes. Sr impurities were detected in the BaTiO sub(3) layer originating most probably from the BaTiO sub(3) precursor solution. copyright 2002 Elsevier Science B.V. 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The BaTiO sub(3) layer is intended to serve as a dielectric layer for a capacitor and the conducting layer 'X' is a buffer layer intended to eliminate fatigue effects, which usually occur at the Pt/BaTiO sub(3) interface. Depth profiles of the main components were obtained revealing intense diffusion processes, which must have occurred during the deposition /crystallisation processes. Sr impurities were detected in the BaTiO sub(3) layer originating most probably from the BaTiO sub(3) precursor solution. copyright 2002 Elsevier Science B.V. All rights reserved.</abstract></addata></record>
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title SIMS characterisation of chemical solution deposited thin film systems of BaTiO sub(3)/X (X = LaNiO sub(3), La sub(0.5)Sr sub(0.5)CoO sub(3), La sub(0.7)Sr sub(0.3 )MnO sub(3)) on a platinised silicon wafer
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