Hysteresis-Free Contact Doping for High-Performance Two-Dimensional Electronics

Contact doping is considered crucial for reducing the contact resistance of two-dimensional (2D) transistors. However, a process for achieving robust contact doping for 2D electronics is lacking. Here, we developed a two-step doping method for effectively doping 2D materials through a defect-repairi...

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Veröffentlicht in:	ACS nano 2023-02, Vol.17 (3), p.2653-2660
Hauptverfasser:	Ho, Po-Hsun, Chang, Jun-Ru, Chen, Chun-Hsiang, Hou, Cheng-Hung, Chiang, Chun-Hao, Shih, Min-Chuan, Hsu, Hung-Chang, Chang, Wen-Hao, Shyue, Jing-Jong, Chiu, Ya-Ping, Chen, Chun-Wei
Format:	Artikel
Sprache:	eng
Online-Zugang:	Volltext
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