Sub-Milliwatt Power III-N Light Emitting Diodes at 285 nm

Using low defect density n+-Al0.4Ga0.6N buffer layers authors fabricated AlGaN p-n junction light emitting diodes over sapphire substrates with peak emission at 285 nm. Powers as high as 0.15 mW were measured at 400 mA pulse pumping. 5 refs.

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Bibliographische Detailangaben
Veröffentlicht in:	Japanese Journal of Applied Physics 2002-04, Vol.41 (Part 2, No. 4B), p.L435-L436
Hauptverfasser:	Adivarahan, Vinod, Zhang, Jianping, Chitnis, Ashay, Shuai, Wu, Sun, Jie, Pachipulusu, Radhika, Shatalov, Maxim, Khan, Muhammad Asif
Format:	Artikel
Sprache:	eng
Online-Zugang:	Volltext
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Beschreibung
Zusammenfassung:	Using low defect density n+-Al0.4Ga0.6N buffer layers authors fabricated AlGaN p-n junction light emitting diodes over sapphire substrates with peak emission at 285 nm. Powers as high as 0.15 mW were measured at 400 mA pulse pumping. 5 refs.
ISSN:	0021-4922
DOI:	10.1143/JJAP.41.L435