ROOM TEMPERATURE FERROMAGNETISM IN NOVEL DILUTED MAGNETIC SEMICONDUCTOR Cd1-xMnxGeP2

High concentration of Mn atoms has been incorporated in the surface region of II-IV-V2 type chalcopyrite semiconductor CdGeP2. Photoluminescence spectrum at 20 K shows a peak around 3.2 eV, suggesting that the incorporation of Mn introduces an energy gap much higher than that of the host semiconduct...

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Veröffentlicht in:	Jpn.J.Appl.Phys ,Part 2. Vol. 39, no. 10A, pp. L949-L951. 2000 Part 2. Vol. 39, no. 10A, pp. L949-L951. 2000, 2000-10, Vol.39 (10A), p.L949-L951
Hauptverfasser:	Medvedkin, G A, Ishibashi, T, Nishi, T, Hayata, K, Hasegawa, Y, Sato, K
Format:	Artikel
Sprache:	eng
Online-Zugang:	Volltext
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