Selectively Controlled Ferromagnets by Electric Fields in van der Waals Ferromagnetic Heterojunctions

Charge transfer plays a key role at the interfaces of heterostructures, which can affect electronic structures and ultimately the physical properties of the materials. However, charge transfer is difficult to manipulate externally once the interface is formed. The recently discovered van der Waals f...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Veröffentlicht in:Nano letters 2023-01, Vol.23 (2), p.710-717
Hauptverfasser: Wang, Zi-Ao, Xue, Weishan, Yan, Faguang, Zhu, Wenkai, Liu, Yi, Zhang, Xinhui, Wei, Zhongming, Chang, Kai, Yuan, Zhe, Wang, Kaiyou
Format: Artikel
Sprache:eng
Online-Zugang:Volltext
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
container_end_page 717
container_issue 2
container_start_page 710
container_title Nano letters
container_volume 23
creator Wang, Zi-Ao
Xue, Weishan
Yan, Faguang
Zhu, Wenkai
Liu, Yi
Zhang, Xinhui
Wei, Zhongming
Chang, Kai
Yuan, Zhe
Wang, Kaiyou
description Charge transfer plays a key role at the interfaces of heterostructures, which can affect electronic structures and ultimately the physical properties of the materials. However, charge transfer is difficult to manipulate externally once the interface is formed. The recently discovered van der Waals ferromagnets with atomically sharp interfaces provided a perfect platform for the electrical control of interfacial charge transfer. Here, we report magnetoresistance experiments revealing electrically tunable charge transfer in Fe3GeTe2/Cr2Ge2Te6/Fe3GeTe2 all-magnetic van der Waals heterostructures, which can be exploited to selectively modify the switching fields of the top or bottom Fe3GeTe2 electrodes. The directional charge transfer from metallic Fe3GeTe2 to semiconducting Cr2Ge2Te6 is revealed by first-principles calculations, which remarkably modifies the magnetic anisotropy energy of Fe3GeTe2, leading to the dramatically suppressed coercivity. The electrically selective control of magnetism demonstrated in this study could stimulate the development of spintronic devices based on van der Waals magnets.
doi_str_mv 10.1021/acs.nanolett.2c04796
format Article
fullrecord <record><control><sourceid>proquest_cross</sourceid><recordid>TN_cdi_proquest_miscellaneous_2769591840</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>2769591840</sourcerecordid><originalsourceid>FETCH-LOGICAL-a394t-fa8f08df26ca39a28950c8840a0a48371d02f7c1ce823445d58782d851331bb63</originalsourceid><addsrcrecordid>eNp9kMtKAzEUhoMotlbfQCRLN1NzmUuylNJaoeBCxeWQyZyRKZmkJjOFvr0pveDKVQ7h-_-TfAjdUzKlhNEnpcPUKusM9P2UaZIWMr9AY5pxkuRSssvzLNIRuglhTQiRPCPXaMTznOWCF2ME72BA9-0WzA7PnO29MwZqvADvXae-LfQBVzs831O-1XjRgqkDbi3eKotr8PhLKRP-BiK1hB68Ww82VjsbbtFVEyG4O54T9LmYf8yWyert5XX2vEoUl2mfNEo0RNQNy3W8UEzIjGghUqKISuNzaU1YU2iqQTCeplmdiUKwWmSUc1pVOZ-gx0PvxrufAUJfdm3QYIyy4IZQsiKXmaSxMaLpAdXeheChKTe-7ZTflZSUe8FlFFyeBJdHwTH2cNwwVB3U59DJaATIAdjH127wNn74_85fD7mL3w</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>2769591840</pqid></control><display><type>article</type><title>Selectively Controlled Ferromagnets by Electric Fields in van der Waals Ferromagnetic Heterojunctions</title><source>American Chemical Society Journals</source><creator>Wang, Zi-Ao ; Xue, Weishan ; Yan, Faguang ; Zhu, Wenkai ; Liu, Yi ; Zhang, Xinhui ; Wei, Zhongming ; Chang, Kai ; Yuan, Zhe ; Wang, Kaiyou</creator><creatorcontrib>Wang, Zi-Ao ; Xue, Weishan ; Yan, Faguang ; Zhu, Wenkai ; Liu, Yi ; Zhang, Xinhui ; Wei, Zhongming ; Chang, Kai ; Yuan, Zhe ; Wang, Kaiyou</creatorcontrib><description>Charge transfer plays a key role at the interfaces of heterostructures, which can affect electronic structures and ultimately the physical properties of the materials. However, charge transfer is difficult to manipulate externally once the interface is formed. The recently discovered van der Waals ferromagnets with atomically sharp interfaces provided a perfect platform for the electrical control of interfacial charge transfer. Here, we report magnetoresistance experiments revealing electrically tunable charge transfer in Fe3GeTe2/Cr2Ge2Te6/Fe3GeTe2 all-magnetic van der Waals heterostructures, which can be exploited to selectively modify the switching fields of the top or bottom Fe3GeTe2 electrodes. The directional charge transfer from metallic Fe3GeTe2 to semiconducting Cr2Ge2Te6 is revealed by first-principles calculations, which remarkably modifies the magnetic anisotropy energy of Fe3GeTe2, leading to the dramatically suppressed coercivity. The electrically selective control of magnetism demonstrated in this study could stimulate the development of spintronic devices based on van der Waals magnets.</description><identifier>ISSN: 1530-6984</identifier><identifier>EISSN: 1530-6992</identifier><identifier>DOI: 10.1021/acs.nanolett.2c04796</identifier><identifier>PMID: 36626837</identifier><language>eng</language><publisher>United States: American Chemical Society</publisher><ispartof>Nano letters, 2023-01, Vol.23 (2), p.710-717</ispartof><rights>2023 American Chemical Society</rights><lds50>peer_reviewed</lds50><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-a394t-fa8f08df26ca39a28950c8840a0a48371d02f7c1ce823445d58782d851331bb63</citedby><cites>FETCH-LOGICAL-a394t-fa8f08df26ca39a28950c8840a0a48371d02f7c1ce823445d58782d851331bb63</cites><orcidid>0000-0002-6237-0993 ; 0000-0002-6017-7575 ; 0000-0003-0059-6599</orcidid></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktopdf>$$Uhttps://pubs.acs.org/doi/pdf/10.1021/acs.nanolett.2c04796$$EPDF$$P50$$Gacs$$H</linktopdf><linktohtml>$$Uhttps://pubs.acs.org/doi/10.1021/acs.nanolett.2c04796$$EHTML$$P50$$Gacs$$H</linktohtml><link.rule.ids>314,780,784,2765,27076,27924,27925,56738,56788</link.rule.ids><backlink>$$Uhttps://www.ncbi.nlm.nih.gov/pubmed/36626837$$D View this record in MEDLINE/PubMed$$Hfree_for_read</backlink></links><search><creatorcontrib>Wang, Zi-Ao</creatorcontrib><creatorcontrib>Xue, Weishan</creatorcontrib><creatorcontrib>Yan, Faguang</creatorcontrib><creatorcontrib>Zhu, Wenkai</creatorcontrib><creatorcontrib>Liu, Yi</creatorcontrib><creatorcontrib>Zhang, Xinhui</creatorcontrib><creatorcontrib>Wei, Zhongming</creatorcontrib><creatorcontrib>Chang, Kai</creatorcontrib><creatorcontrib>Yuan, Zhe</creatorcontrib><creatorcontrib>Wang, Kaiyou</creatorcontrib><title>Selectively Controlled Ferromagnets by Electric Fields in van der Waals Ferromagnetic Heterojunctions</title><title>Nano letters</title><addtitle>Nano Lett</addtitle><description>Charge transfer plays a key role at the interfaces of heterostructures, which can affect electronic structures and ultimately the physical properties of the materials. However, charge transfer is difficult to manipulate externally once the interface is formed. The recently discovered van der Waals ferromagnets with atomically sharp interfaces provided a perfect platform for the electrical control of interfacial charge transfer. Here, we report magnetoresistance experiments revealing electrically tunable charge transfer in Fe3GeTe2/Cr2Ge2Te6/Fe3GeTe2 all-magnetic van der Waals heterostructures, which can be exploited to selectively modify the switching fields of the top or bottom Fe3GeTe2 electrodes. The directional charge transfer from metallic Fe3GeTe2 to semiconducting Cr2Ge2Te6 is revealed by first-principles calculations, which remarkably modifies the magnetic anisotropy energy of Fe3GeTe2, leading to the dramatically suppressed coercivity. The electrically selective control of magnetism demonstrated in this study could stimulate the development of spintronic devices based on van der Waals magnets.</description><issn>1530-6984</issn><issn>1530-6992</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2023</creationdate><recordtype>article</recordtype><recordid>eNp9kMtKAzEUhoMotlbfQCRLN1NzmUuylNJaoeBCxeWQyZyRKZmkJjOFvr0pveDKVQ7h-_-TfAjdUzKlhNEnpcPUKusM9P2UaZIWMr9AY5pxkuRSssvzLNIRuglhTQiRPCPXaMTznOWCF2ME72BA9-0WzA7PnO29MwZqvADvXae-LfQBVzs831O-1XjRgqkDbi3eKotr8PhLKRP-BiK1hB68Ww82VjsbbtFVEyG4O54T9LmYf8yWyert5XX2vEoUl2mfNEo0RNQNy3W8UEzIjGghUqKISuNzaU1YU2iqQTCeplmdiUKwWmSUc1pVOZ-gx0PvxrufAUJfdm3QYIyy4IZQsiKXmaSxMaLpAdXeheChKTe-7ZTflZSUe8FlFFyeBJdHwTH2cNwwVB3U59DJaATIAdjH127wNn74_85fD7mL3w</recordid><startdate>20230125</startdate><enddate>20230125</enddate><creator>Wang, Zi-Ao</creator><creator>Xue, Weishan</creator><creator>Yan, Faguang</creator><creator>Zhu, Wenkai</creator><creator>Liu, Yi</creator><creator>Zhang, Xinhui</creator><creator>Wei, Zhongming</creator><creator>Chang, Kai</creator><creator>Yuan, Zhe</creator><creator>Wang, Kaiyou</creator><general>American Chemical Society</general><scope>NPM</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7X8</scope><orcidid>https://orcid.org/0000-0002-6237-0993</orcidid><orcidid>https://orcid.org/0000-0002-6017-7575</orcidid><orcidid>https://orcid.org/0000-0003-0059-6599</orcidid></search><sort><creationdate>20230125</creationdate><title>Selectively Controlled Ferromagnets by Electric Fields in van der Waals Ferromagnetic Heterojunctions</title><author>Wang, Zi-Ao ; Xue, Weishan ; Yan, Faguang ; Zhu, Wenkai ; Liu, Yi ; Zhang, Xinhui ; Wei, Zhongming ; Chang, Kai ; Yuan, Zhe ; Wang, Kaiyou</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-a394t-fa8f08df26ca39a28950c8840a0a48371d02f7c1ce823445d58782d851331bb63</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2023</creationdate><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Wang, Zi-Ao</creatorcontrib><creatorcontrib>Xue, Weishan</creatorcontrib><creatorcontrib>Yan, Faguang</creatorcontrib><creatorcontrib>Zhu, Wenkai</creatorcontrib><creatorcontrib>Liu, Yi</creatorcontrib><creatorcontrib>Zhang, Xinhui</creatorcontrib><creatorcontrib>Wei, Zhongming</creatorcontrib><creatorcontrib>Chang, Kai</creatorcontrib><creatorcontrib>Yuan, Zhe</creatorcontrib><creatorcontrib>Wang, Kaiyou</creatorcontrib><collection>PubMed</collection><collection>CrossRef</collection><collection>MEDLINE - Academic</collection><jtitle>Nano letters</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Wang, Zi-Ao</au><au>Xue, Weishan</au><au>Yan, Faguang</au><au>Zhu, Wenkai</au><au>Liu, Yi</au><au>Zhang, Xinhui</au><au>Wei, Zhongming</au><au>Chang, Kai</au><au>Yuan, Zhe</au><au>Wang, Kaiyou</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Selectively Controlled Ferromagnets by Electric Fields in van der Waals Ferromagnetic Heterojunctions</atitle><jtitle>Nano letters</jtitle><addtitle>Nano Lett</addtitle><date>2023-01-25</date><risdate>2023</risdate><volume>23</volume><issue>2</issue><spage>710</spage><epage>717</epage><pages>710-717</pages><issn>1530-6984</issn><eissn>1530-6992</eissn><abstract>Charge transfer plays a key role at the interfaces of heterostructures, which can affect electronic structures and ultimately the physical properties of the materials. However, charge transfer is difficult to manipulate externally once the interface is formed. The recently discovered van der Waals ferromagnets with atomically sharp interfaces provided a perfect platform for the electrical control of interfacial charge transfer. Here, we report magnetoresistance experiments revealing electrically tunable charge transfer in Fe3GeTe2/Cr2Ge2Te6/Fe3GeTe2 all-magnetic van der Waals heterostructures, which can be exploited to selectively modify the switching fields of the top or bottom Fe3GeTe2 electrodes. The directional charge transfer from metallic Fe3GeTe2 to semiconducting Cr2Ge2Te6 is revealed by first-principles calculations, which remarkably modifies the magnetic anisotropy energy of Fe3GeTe2, leading to the dramatically suppressed coercivity. The electrically selective control of magnetism demonstrated in this study could stimulate the development of spintronic devices based on van der Waals magnets.</abstract><cop>United States</cop><pub>American Chemical Society</pub><pmid>36626837</pmid><doi>10.1021/acs.nanolett.2c04796</doi><tpages>8</tpages><orcidid>https://orcid.org/0000-0002-6237-0993</orcidid><orcidid>https://orcid.org/0000-0002-6017-7575</orcidid><orcidid>https://orcid.org/0000-0003-0059-6599</orcidid><oa>free_for_read</oa></addata></record>
fulltext fulltext
identifier ISSN: 1530-6984
ispartof Nano letters, 2023-01, Vol.23 (2), p.710-717
issn 1530-6984
1530-6992
language eng
recordid cdi_proquest_miscellaneous_2769591840
source American Chemical Society Journals
title Selectively Controlled Ferromagnets by Electric Fields in van der Waals Ferromagnetic Heterojunctions
url https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2024-12-19T14%3A49%3A43IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-proquest_cross&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Selectively%20Controlled%20Ferromagnets%20by%20Electric%20Fields%20in%20van%20der%20Waals%20Ferromagnetic%20Heterojunctions&rft.jtitle=Nano%20letters&rft.au=Wang,%20Zi-Ao&rft.date=2023-01-25&rft.volume=23&rft.issue=2&rft.spage=710&rft.epage=717&rft.pages=710-717&rft.issn=1530-6984&rft.eissn=1530-6992&rft_id=info:doi/10.1021/acs.nanolett.2c04796&rft_dat=%3Cproquest_cross%3E2769591840%3C/proquest_cross%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_pqid=2769591840&rft_id=info:pmid/36626837&rfr_iscdi=true