Optical and structural characterization of Si/SiGe heterostructures grown by RTCVD

The effect of interface potential fluctuations of a Si/SiGe multiple quantum well structure upon the low temperature exciton luminescence is studied. A possible exciton localization at such potential fluctuations, with a lateral period of 9-12 nm, is observed as a blue shift with increasing excitati...

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Veröffentlicht in:	Thin solid films 2000-07, Vol.369 (1-2), p.431-435
Hauptverfasser:	SIDIKI, T, CHRISTIANSEN, S. H, CHABERT, S, DE BOER, W. B, FERRARI, C, STRUNK, H. P, SOTOMAYOR TORRES, C. M
Format:	Artikel
Sprache:	eng
Schlagworte:	Condensed matter: electronic structure, electrical, magnetic, and optical properties Condensed matter: structure, mechanical and thermal properties Elemental semiconductors Elemental semiconductors and insulators Exact sciences and technology Low-dimensional structures (superlattices, quantum well structures, multilayers): structure, and nonelectronic properties Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation Optical properties of specific thin films Photoluminescence Physics Surfaces and interfaces thin films and whiskers (structure and nonelectronic properties)
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