Physically-based RF model for metal-oxide-metal capacitors

A new metal-oxide-metal (MOM) capacitor model is presented for RF (radio frequency) applications. Parasitics resulting from the geometry and physical topology of the model are taken into account. The model fits very well with the measured data in the frequency range 1-10 GHz. The results show that t...

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Veröffentlicht in:	Electronics letters 2000-03, Vol.36 (5), p.425-427
Hauptverfasser:	Geng, Chunqi, Chew, Kok Wai, Yeo, Kiat Seng, Do, Manh Anh, Ma, Jianguo, Chua, Chee Tee, Shao, Kai
Format:	Artikel
Sprache:	eng
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