Physically-based RF model for metal-oxide-metal capacitors

Physically-based RF model for metal-oxide-metal capacitors

A new metal-oxide-metal (MOM) capacitor model is presented for RF (radio frequency) applications. Parasitics resulting from the geometry and physical topology of the model are taken into account. The model fits very well with the measured data in the frequency range 1-10 GHz. The results show that t...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Veröffentlicht in:Electronics letters 2000-03, Vol.36 (5), p.425-427
Hauptverfasser: Geng, Chunqi, Chew, Kok Wai, Yeo, Kiat Seng, Do, Manh Anh, Ma, Jianguo, Chua, Chee Tee, Shao, Kai
Format: Artikel
Sprache:eng
Online-Zugang:Volltext bestellen
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
container_end_page 427
container_issue 5
container_start_page 425
container_title Electronics letters
container_volume 36
creator Geng, Chunqi
Chew, Kok Wai
Yeo, Kiat Seng
Do, Manh Anh
Ma, Jianguo
Chua, Chee Tee
Shao, Kai
description A new metal-oxide-metal (MOM) capacitor model is presented for RF (radio frequency) applications. Parasitics resulting from the geometry and physical topology of the model are taken into account. The model fits very well with the measured data in the frequency range 1-10 GHz. The results show that the proposed model provides more accurate results than the conventional model, while retaining the physical properties of every element in the model.
doi_str_mv 10.1049/el:20000393
format Article
fullrecord <record><control><sourceid>proquest</sourceid><recordid>TN_cdi_proquest_miscellaneous_27647423</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>27647423</sourcerecordid><originalsourceid>FETCH-LOGICAL-c226t-1fcf9b8170f8faee9299f49d3d0df1d792c7edefac2fcdcbcd515a86fdd1c5bd0</originalsourceid><addsrcrecordid>eNotjTtPwzAYRT2ARClM_AFPbAbbeTjuhipKkSpRVTBXzvcQQQ4ucSrRf08E3OWeu5wrxI3Rd0aX_p7iwuophS_OxExrU6jK-PJCXOb8MU3rvZuJxfb9lDsIMZ5UGzKh3K1kn5Ci5DTInsYQVfrukNQvSwiHAN2YhnwlzjnETNf_PRdvq8fX5VptXp6elw8bBdbWozIM7NvGOM0NByI_HXPpsUCNbNB5C46QOIBlQGgBK1OFpmZEA1WLei5u_7yHIX0dKY_7vstAMYZPSse8t64uXWkL_QOMTEoO</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>27647423</pqid></control><display><type>article</type><title>Physically-based RF model for metal-oxide-metal capacitors</title><creator>Geng, Chunqi ; Chew, Kok Wai ; Yeo, Kiat Seng ; Do, Manh Anh ; Ma, Jianguo ; Chua, Chee Tee ; Shao, Kai</creator><creatorcontrib>Geng, Chunqi ; Chew, Kok Wai ; Yeo, Kiat Seng ; Do, Manh Anh ; Ma, Jianguo ; Chua, Chee Tee ; Shao, Kai</creatorcontrib><description>A new metal-oxide-metal (MOM) capacitor model is presented for RF (radio frequency) applications. Parasitics resulting from the geometry and physical topology of the model are taken into account. The model fits very well with the measured data in the frequency range 1-10 GHz. The results show that the proposed model provides more accurate results than the conventional model, while retaining the physical properties of every element in the model.</description><identifier>ISSN: 0013-5194</identifier><identifier>DOI: 10.1049/el:20000393</identifier><language>eng</language><ispartof>Electronics letters, 2000-03, Vol.36 (5), p.425-427</ispartof><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c226t-1fcf9b8170f8faee9299f49d3d0df1d792c7edefac2fcdcbcd515a86fdd1c5bd0</citedby></display><links><openurl>$$Topenurl_article</openurl><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>776</link.rule.ids></links><search><creatorcontrib>Geng, Chunqi</creatorcontrib><creatorcontrib>Chew, Kok Wai</creatorcontrib><creatorcontrib>Yeo, Kiat Seng</creatorcontrib><creatorcontrib>Do, Manh Anh</creatorcontrib><creatorcontrib>Ma, Jianguo</creatorcontrib><creatorcontrib>Chua, Chee Tee</creatorcontrib><creatorcontrib>Shao, Kai</creatorcontrib><title>Physically-based RF model for metal-oxide-metal capacitors</title><title>Electronics letters</title><description>A new metal-oxide-metal (MOM) capacitor model is presented for RF (radio frequency) applications. Parasitics resulting from the geometry and physical topology of the model are taken into account. The model fits very well with the measured data in the frequency range 1-10 GHz. The results show that the proposed model provides more accurate results than the conventional model, while retaining the physical properties of every element in the model.</description><issn>0013-5194</issn><fulltext>false</fulltext><rsrctype>article</rsrctype><creationdate>2000</creationdate><recordtype>article</recordtype><recordid>eNotjTtPwzAYRT2ARClM_AFPbAbbeTjuhipKkSpRVTBXzvcQQQ4ucSrRf08E3OWeu5wrxI3Rd0aX_p7iwuophS_OxExrU6jK-PJCXOb8MU3rvZuJxfb9lDsIMZ5UGzKh3K1kn5Ci5DTInsYQVfrukNQvSwiHAN2YhnwlzjnETNf_PRdvq8fX5VptXp6elw8bBdbWozIM7NvGOM0NByI_HXPpsUCNbNB5C46QOIBlQGgBK1OFpmZEA1WLei5u_7yHIX0dKY_7vstAMYZPSse8t64uXWkL_QOMTEoO</recordid><startdate>20000302</startdate><enddate>20000302</enddate><creator>Geng, Chunqi</creator><creator>Chew, Kok Wai</creator><creator>Yeo, Kiat Seng</creator><creator>Do, Manh Anh</creator><creator>Ma, Jianguo</creator><creator>Chua, Chee Tee</creator><creator>Shao, Kai</creator><scope>7SP</scope><scope>8FD</scope><scope>L7M</scope></search><sort><creationdate>20000302</creationdate><title>Physically-based RF model for metal-oxide-metal capacitors</title><author>Geng, Chunqi ; Chew, Kok Wai ; Yeo, Kiat Seng ; Do, Manh Anh ; Ma, Jianguo ; Chua, Chee Tee ; Shao, Kai</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c226t-1fcf9b8170f8faee9299f49d3d0df1d792c7edefac2fcdcbcd515a86fdd1c5bd0</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2000</creationdate><toplevel>peer_reviewed</toplevel><creatorcontrib>Geng, Chunqi</creatorcontrib><creatorcontrib>Chew, Kok Wai</creatorcontrib><creatorcontrib>Yeo, Kiat Seng</creatorcontrib><creatorcontrib>Do, Manh Anh</creatorcontrib><creatorcontrib>Ma, Jianguo</creatorcontrib><creatorcontrib>Chua, Chee Tee</creatorcontrib><creatorcontrib>Shao, Kai</creatorcontrib><collection>Electronics &amp; Communications Abstracts</collection><collection>Technology Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>Electronics letters</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>no_fulltext</fulltext></delivery><addata><au>Geng, Chunqi</au><au>Chew, Kok Wai</au><au>Yeo, Kiat Seng</au><au>Do, Manh Anh</au><au>Ma, Jianguo</au><au>Chua, Chee Tee</au><au>Shao, Kai</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Physically-based RF model for metal-oxide-metal capacitors</atitle><jtitle>Electronics letters</jtitle><date>2000-03-02</date><risdate>2000</risdate><volume>36</volume><issue>5</issue><spage>425</spage><epage>427</epage><pages>425-427</pages><issn>0013-5194</issn><abstract>A new metal-oxide-metal (MOM) capacitor model is presented for RF (radio frequency) applications. Parasitics resulting from the geometry and physical topology of the model are taken into account. The model fits very well with the measured data in the frequency range 1-10 GHz. The results show that the proposed model provides more accurate results than the conventional model, while retaining the physical properties of every element in the model.</abstract><doi>10.1049/el:20000393</doi><tpages>3</tpages></addata></record>
fulltext no_fulltext
identifier ISSN: 0013-5194
ispartof Electronics letters, 2000-03, Vol.36 (5), p.425-427
issn 0013-5194
language eng
recordid cdi_proquest_miscellaneous_27647423
source
title Physically-based RF model for metal-oxide-metal capacitors
url https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-27T23%3A26%3A02IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-proquest&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Physically-based%20RF%20model%20for%20metal-oxide-metal%20capacitors&rft.jtitle=Electronics%20letters&rft.au=Geng,%20Chunqi&rft.date=2000-03-02&rft.volume=36&rft.issue=5&rft.spage=425&rft.epage=427&rft.pages=425-427&rft.issn=0013-5194&rft_id=info:doi/10.1049/el:20000393&rft_dat=%3Cproquest%3E27647423%3C/proquest%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_pqid=27647423&rft_id=info:pmid/&rfr_iscdi=true