A new process-variation-immunity method for extracting capacitance coupling coefficients in flash memory cells

Overestimation of capacitance coupling coefficients in flash memory cells is encountered in the subthreshold slope method. By means of a two-parameters subthreshold current model I/sub D/=I/sub 0/ exp[q(V/sub GB/ - nV/sub SB/)/nkT], a mathematical formulation of the subthreshold swing ratio in the s...

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Veröffentlicht in:	IEEE electron device letters 2002-07, Vol.23 (7), p.422-424
Hauptverfasser:	Cho, Caleb Yu-Sheng, Chen, Ming-Jer, Lin, Jia-Han, Chen, Chiou-Feng
Format:	Artikel
Sprache:	eng
Schlagworte:	Bias Capacitance Coupling coefficients Current measurement Devices Error analysis Flash memory Flash memory (computers) Flash memory cells Joining Manufacturing processes Mathematical models MOSFETs Nonvolatile memory Subthreshold current Threshold voltage Voltage control
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