P-Down InGaN/GaN Multiple Quantum Wells Light-Emitting Diode Structure Grown by Metal-Organic Vapor-Phase Epitaxy

An inverted or p-down InGaN/GaN multiple quantum wells light-emitting diode structure is studied. The crystalline quality of the quantum wells is comparable to that of the n-down structure by using a Si or In co-doped GaN:Mg layer underneath the active layer. I-V characteristics can be improved by i...

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Veröffentlicht in:	Japanese Journal of Applied Physics 2002-04, Vol.41 (Part 1, No. 4B), p.2489-2492
Hauptverfasser:	Ko, Chih-Hsin, Su, Yan-Kuin, Chang, Shoou-Jinn, Kuan, Ta-Ming, Chiang, Chung-I, Lan, Wen-How, Lin, Wen-Jen, Webb, James
Format:	Artikel
Sprache:	eng
Online-Zugang:	Volltext
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