On the Carrier Concentration and Hall Mobility in GaN Epilayers

The dependence of Hall mobility and carrier concentration in GaN epilayers on light illumination was examined. Hall mobility and electron concentration both increased after illumination with red laser (632.8 nm) and green laser (530 nm). However, no changes in Hall mobility and carrier concentration...

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Veröffentlicht in:	Japanese Journal of Applied Physics 2002-03, Vol.41 (Part 2, No. 3A), p.L226-L228
Hauptverfasser:	Ko, Chih-Hsin, Chang, Shoou-Jinn, Su, Yan-Kuin, Lan, Wen-How, Chen, Jone F., Kuan, Ta-Ming, Huang, Yao-Cong, Chiang, Chung-I., Webb, Jim, Lin, Wen-Jen
Format:	Artikel
Sprache:	eng
Online-Zugang:	Volltext
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