Interfacial reactions for the non-stoichiometric TiBx/(100)Si system

The solid phase reactions were investigated by means of sheet resistance, XRD, TEM, XPS and stress measurement. For TiBx samples with a ratio of B/Ti greater than or equal to 2.0, an apparent structural change is not observed even after annealing at 1000 C for 1 h. For samples with a ratio of B/Ti < 2.0, however, there are two competitive solid phase reactions: the formation of a titanium silicide layer at the interface and the formation of a stoichiometric TiB2 layer at the surface, indicating the salicide (self-aligned silicide) process. The sheet resistance and the film stress in the Ti/Si and TiBx/Si systems are explained by solid phase reactions. 17 refs.