An Analytical, Temperature-dependent Model for Majority- and Minority-carrier Mobility in Silicon Devices

A new analytical model for carrier mobility in silicon is presented, which is strongly oriented to CAD and suitable for implementation in device simulators. The effects of the electric field, temperature, and doping concentration are accounted for. In particular, the model unifies the descriptions o...

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Veröffentlicht in:	VLSI Design 2000-01, Vol.2000 (4), p.n467-483
Hauptverfasser:	Reggiani, Susanna, Valdinoci, Marina, Colalongo, Luigi, Rudan, Massimo, Baccarani, Giorgio
Format:	Artikel
Sprache:	eng
Online-Zugang:	Volltext
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