MOVPE grown Ga sub(1-x)In sub(x)As solar cells for GaInP/GaInAs tandem applications

Lattice-mismatched Ga sub(1-x)In sub(x)As solar cells with an absorption edge between 900 and 1150 nm have been grown on GaAs substrates. Different graded Ga sub(1-x)In sub(x)As buffer layers and solar cell structures were evaluated to achieve a good electrical performance of the device. External qu...

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Veröffentlicht in:	Journal of electronic materials 2000-01, Vol.29 (1), p.42-46
Hauptverfasser:	Dimroth, F, Lanyi, P, Schubert, U, Bett, A W
Format:	Artikel
Sprache:	eng
Online-Zugang:	Volltext
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