Negative-Capacitance Effect in Forward-Biased Metal Oxide Semiconductor Tunnel Diodes (MOSTD)
A negative capacitance (NC) effect in metal oxide semiconductor tunnel diodes (MOSTD) is reported. The phenomenon is observed with forward-biased minority carrier type MOSTDs with low measurement frequencies. Enhancements of the effect with the higher substrate resistivity and with the increase of t...
Gespeichert in:
| Veröffentlicht in: | Japanese Journal of Applied Physics 2000, Vol.39 (2B), p.L123-L125 |
|---|---|
| Hauptverfasser: | , |
| Format: | Artikel |
| Sprache: | eng |
| Online-Zugang: | Volltext |
| Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
Schreiben Sie den ersten Kommentar!