Negative-Capacitance Effect in Forward-Biased Metal Oxide Semiconductor Tunnel Diodes (MOSTD)
A negative capacitance (NC) effect in metal oxide semiconductor tunnel diodes (MOSTD) is reported. The phenomenon is observed with forward-biased minority carrier type MOSTDs with low measurement frequencies. Enhancements of the effect with the higher substrate resistivity and with the increase of t...
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| Veröffentlicht in: | Japanese Journal of Applied Physics 2000, Vol.39 (2B), p.L123-L125 |
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| container_end_page | L125 |
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| container_issue | 2B |
| container_start_page | L123 |
| container_title | Japanese Journal of Applied Physics |
| container_volume | 39 |
| creator | Matsumura, Mieko Hirose, Yutaka |
| description | A negative capacitance (NC) effect in metal oxide
semiconductor tunnel diodes (MOSTD) is reported. The phenomenon is
observed with forward-biased minority carrier type MOSTDs with low
measurement frequencies. Enhancements of the effect with the higher
substrate resistivity and with the increase of the minority carrier
injection indicate that the effect arises from conductivity
modulation in the substrate. The equivalent circuit consisting of a
parallel “inductor”-resistor pair in series with the ordinary
equivalent circuit of a MOSTD biased in accumulation is found to be
a good first order representation of the measured impedance spectra. |
| doi_str_mv | 10.1143/JJAP.39.L123 |
| format | Article |
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semiconductor tunnel diodes (MOSTD) is reported. The phenomenon is
observed with forward-biased minority carrier type MOSTDs with low
measurement frequencies. Enhancements of the effect with the higher
substrate resistivity and with the increase of the minority carrier
injection indicate that the effect arises from conductivity
modulation in the substrate. The equivalent circuit consisting of a
parallel “inductor”-resistor pair in series with the ordinary
equivalent circuit of a MOSTD biased in accumulation is found to be
a good first order representation of the measured impedance spectra.</description><identifier>ISSN: 0021-4922</identifier><identifier>EISSN: 1347-4065</identifier><identifier>DOI: 10.1143/JJAP.39.L123</identifier><language>eng</language><ispartof>Japanese Journal of Applied Physics, 2000, Vol.39 (2B), p.L123-L125</ispartof><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c412t-8b8fc8779c477d20b52e434890e4d55d77a86f6b3c521683a3586d291c8b26883</citedby><cites>FETCH-LOGICAL-c412t-8b8fc8779c477d20b52e434890e4d55d77a86f6b3c521683a3586d291c8b26883</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,776,780,4010,27900,27901,27902</link.rule.ids></links><search><creatorcontrib>Matsumura, Mieko</creatorcontrib><creatorcontrib>Hirose, Yutaka</creatorcontrib><title>Negative-Capacitance Effect in Forward-Biased Metal Oxide Semiconductor Tunnel Diodes (MOSTD)</title><title>Japanese Journal of Applied Physics</title><description>A negative capacitance (NC) effect in metal oxide
semiconductor tunnel diodes (MOSTD) is reported. The phenomenon is
observed with forward-biased minority carrier type MOSTDs with low
measurement frequencies. Enhancements of the effect with the higher
substrate resistivity and with the increase of the minority carrier
injection indicate that the effect arises from conductivity
modulation in the substrate. The equivalent circuit consisting of a
parallel “inductor”-resistor pair in series with the ordinary
equivalent circuit of a MOSTD biased in accumulation is found to be
a good first order representation of the measured impedance spectra.</description><issn>0021-4922</issn><issn>1347-4065</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2000</creationdate><recordtype>article</recordtype><recordid>eNotkMtKw0AYRgdRsFZ3PsCsRMHUuSaTZe1FLa0VWpcyTGb-yEia1JnEy9vbUlcfHxzO4iB0ScmAUsHvZrPhy4Dngzll_Aj1KBdZIkgqj1GPEEYTkTN2is5i_NjdVAraQ2_P8G5a_wXJyGyN9a2pLeBJWYJtsa_xtAnfJrjk3psIDi-gNRVe_ngHeAUbb5vadbZtAl53dQ0VHvvGQcTXi-VqPb45RyelqSJc_G8fvU4n69FjMl8-PI2G88QKytpEFaq0KstyK7LMMVJIBoILlRMQTkqXZUalZVpwKxlNFTdcqtSxnFpVsFQp3kdXB-82NJ8dxFZvfLRQVaaGpouaZSmRLCc78PYA2tDEGKDU2-A3JvxqSvS-od431DzX-4b8D4aXYqw</recordid><startdate>2000</startdate><enddate>2000</enddate><creator>Matsumura, Mieko</creator><creator>Hirose, Yutaka</creator><scope>AAYXX</scope><scope>CITATION</scope><scope>7QQ</scope><scope>8FD</scope><scope>JG9</scope></search><sort><creationdate>2000</creationdate><title>Negative-Capacitance Effect in Forward-Biased Metal Oxide Semiconductor Tunnel Diodes (MOSTD)</title><author>Matsumura, Mieko ; Hirose, Yutaka</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c412t-8b8fc8779c477d20b52e434890e4d55d77a86f6b3c521683a3586d291c8b26883</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2000</creationdate><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Matsumura, Mieko</creatorcontrib><creatorcontrib>Hirose, Yutaka</creatorcontrib><collection>CrossRef</collection><collection>Ceramic Abstracts</collection><collection>Technology Research Database</collection><collection>Materials Research Database</collection><jtitle>Japanese Journal of Applied Physics</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Matsumura, Mieko</au><au>Hirose, Yutaka</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Negative-Capacitance Effect in Forward-Biased Metal Oxide Semiconductor Tunnel Diodes (MOSTD)</atitle><jtitle>Japanese Journal of Applied Physics</jtitle><date>2000</date><risdate>2000</risdate><volume>39</volume><issue>2B</issue><spage>L123</spage><epage>L125</epage><pages>L123-L125</pages><issn>0021-4922</issn><eissn>1347-4065</eissn><abstract>A negative capacitance (NC) effect in metal oxide
semiconductor tunnel diodes (MOSTD) is reported. The phenomenon is
observed with forward-biased minority carrier type MOSTDs with low
measurement frequencies. Enhancements of the effect with the higher
substrate resistivity and with the increase of the minority carrier
injection indicate that the effect arises from conductivity
modulation in the substrate. The equivalent circuit consisting of a
parallel “inductor”-resistor pair in series with the ordinary
equivalent circuit of a MOSTD biased in accumulation is found to be
a good first order representation of the measured impedance spectra.</abstract><doi>10.1143/JJAP.39.L123</doi></addata></record> |
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| ispartof | Japanese Journal of Applied Physics, 2000, Vol.39 (2B), p.L123-L125 |
| issn | 0021-4922 1347-4065 |
| language | eng |
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| title | Negative-Capacitance Effect in Forward-Biased Metal Oxide Semiconductor Tunnel Diodes (MOSTD) |
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