Marks for SCALPEL ® tool optics optimization
A method for optimizing the electron optics of the SCALPEL exposure tool is described. The method uses the SCALPEL mark detection method with a grating mark as an aerial image monitor. The root-mean-square deviation of the recorded backscattered electron signal from an ideal triangle waveform was us...
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Veröffentlicht in: | Microelectronic engineering 2000-06, Vol.53 (1), p.309-312 |
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Hauptverfasser: | , , , , , , , , , , , , , , |
Format: | Artikel |
Sprache: | eng |
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Zusammenfassung: | A method for optimizing the electron optics of the SCALPEL exposure tool is described. The method uses the SCALPEL mark detection method with a grating mark as an aerial image monitor. The root-mean-square deviation of the recorded backscattered electron signal from an ideal triangle waveform was used as a measure of the image fidelity, scale and orientation. The resolution of the technique is limited only by signal-to-noise and the fidelity of the marks. Experiments were performed using 2 μm period grating marks that were fabricated in a SiO
2/WSi
2 structure using SCALPEL lithography and plasma processing. The projector lenses and magnification/rotation coils were optimized. For these experiments the measured resolutions for determining focus (δf), magnification (δM), and rotation (δθ) of a 250 μm X 250 μm field were δf ∼ ±1 μm, δM ∼ ±15 ppm and δθ ∼ ± 0.1 mrad. A straightforward path to improving these results is described. |
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ISSN: | 0167-9317 1873-5568 |
DOI: | 10.1016/S0167-9317(00)00321-X |