Enhanced Negative-Bias-Temperature Instability of P-Channel Metal-Oxide-Semiconductor Transistors due to Plasma Charging Damage

The effects of plasma charging on the negative-bias-temperature instability (NBTI) of p-channel MOS transistors were explored. The threshold voltage shift during bias-temperature stressing (BTS) could be enhanced by plasma charging damage. Authors also found that electron trappings are aggravated by...

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Veröffentlicht in:	Japanese Journal of Applied Physics 2002, Vol.41 (Part 1, No. 4B), p.2419-2422
Hauptverfasser:	Lee, Da-Yuan, Lin, Horng-Chih, Wang, Meng-Feng, Tsai, Min-Yu, Huang, Tiao-Yuan, Wang, Tahui
Format:	Artikel
Sprache:	eng
Online-Zugang:	Volltext
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