Underlayer work function effect on nucleation and film morphology of chemical vapor deposited aluminum
The dependence of early stage of dimethylaluminum hydride (DMAH)-sourced aluminum chemical vapor deposition on underlayer material was investigated. Identical process conditions were used to deposit the aluminum on TiN, TaN and Ti-W surfaces. Surface coverage and particle densities of aluminum depos...
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| Veröffentlicht in: | Thin solid films 2002-04, Vol.408 (1), p.87-96 |
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| container_title | Thin solid films |
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| creator | Rogers, B.R. |
| description | The dependence of early stage of dimethylaluminum hydride (DMAH)-sourced aluminum chemical vapor deposition on underlayer material was investigated. Identical process conditions were used to deposit the aluminum on TiN, TaN and Ti-W surfaces. Surface coverage and particle densities of aluminum deposited on TiN were much greater than those deposited on Ti-W or TaN. Work function measurements performed on the three metal surfaces suggest that the difference in nucleation rate on TiN compared to TaN and Ti-W is due its increased ability to donate electrons to the DMAH decomposition process. |
| doi_str_mv | 10.1016/S0040-6090(02)00144-X |
| format | Article |
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Identical process conditions were used to deposit the aluminum on TiN, TaN and Ti-W surfaces. Surface coverage and particle densities of aluminum deposited on TiN were much greater than those deposited on Ti-W or TaN. Work function measurements performed on the three metal surfaces suggest that the difference in nucleation rate on TiN compared to TaN and Ti-W is due its increased ability to donate electrons to the DMAH decomposition process.</description><identifier>ISSN: 0040-6090</identifier><identifier>EISSN: 1879-2731</identifier><identifier>DOI: 10.1016/S0040-6090(02)00144-X</identifier><identifier>CODEN: THSFAP</identifier><language>eng</language><publisher>Lausanne: Elsevier B.V</publisher><subject>Aluminum ; Applied sciences ; Chemical vapor deposition (CVD) ; Chemical vapor deposition (including plasma-enhanced cvd, mocvd, etc.) ; Condensed matter: electronic structure, electrical, magnetic, and optical properties ; Cross-disciplinary physics: materials science; rheology ; Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures ; Exact sciences and technology ; Materials science ; Metals. Metallurgy ; Methods of deposition of films and coatings; film growth and epitaxy ; Nucleation ; Physics ; Surface double layers, schottky barriers, and work functions ; Work function</subject><ispartof>Thin solid films, 2002-04, Vol.408 (1), p.87-96</ispartof><rights>2002 Elsevier Science B.V.</rights><rights>2002 INIST-CNRS</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c399t-32ad098d025ad00d871ed71e2d29a0da3c69cd8b2b7649380577c70efe9fcafe3</citedby><cites>FETCH-LOGICAL-c399t-32ad098d025ad00d871ed71e2d29a0da3c69cd8b2b7649380577c70efe9fcafe3</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://www.sciencedirect.com/science/article/pii/S004060900200144X$$EHTML$$P50$$Gelsevier$$H</linktohtml><link.rule.ids>314,776,780,3537,27901,27902,65306</link.rule.ids><backlink>$$Uhttp://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&idt=13720460$$DView record in Pascal Francis$$Hfree_for_read</backlink></links><search><creatorcontrib>Rogers, B.R.</creatorcontrib><title>Underlayer work function effect on nucleation and film morphology of chemical vapor deposited aluminum</title><title>Thin solid films</title><description>The dependence of early stage of dimethylaluminum hydride (DMAH)-sourced aluminum chemical vapor deposition on underlayer material was investigated. Identical process conditions were used to deposit the aluminum on TiN, TaN and Ti-W surfaces. Surface coverage and particle densities of aluminum deposited on TiN were much greater than those deposited on Ti-W or TaN. Work function measurements performed on the three metal surfaces suggest that the difference in nucleation rate on TiN compared to TaN and Ti-W is due its increased ability to donate electrons to the DMAH decomposition process.</description><subject>Aluminum</subject><subject>Applied sciences</subject><subject>Chemical vapor deposition (CVD)</subject><subject>Chemical vapor deposition (including plasma-enhanced cvd, mocvd, etc.)</subject><subject>Condensed matter: electronic structure, electrical, magnetic, and optical properties</subject><subject>Cross-disciplinary physics: materials science; rheology</subject><subject>Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures</subject><subject>Exact sciences and technology</subject><subject>Materials science</subject><subject>Metals. Metallurgy</subject><subject>Methods of deposition of films and coatings; film growth and epitaxy</subject><subject>Nucleation</subject><subject>Physics</subject><subject>Surface double layers, schottky barriers, and work functions</subject><subject>Work function</subject><issn>0040-6090</issn><issn>1879-2731</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2002</creationdate><recordtype>article</recordtype><recordid>eNqNkEFrFTEQx4Mo-Kx-BCEXRQ_bzia7m81JpGhbKPTQFnoLaTKx0WyyJrst79ubvlf0WA_DDMNv5g8_Qt63cNhCOxxdAnTQDCDhE7DPAG3XNTcvyKYdhWyY4O1LsvmLvCZvSvkJlWKMb4i7jhZz0FvM9CHlX9St0Sw-RYrOoVloneJqAurdUkdLnQ8TnVKe71JIP7Y0OWrucPJGB3qv55SpxTkVv6ClOqyTj-v0lrxyOhR899QPyPX3b1fHp835xcnZ8dfzxnApl4YzbUGOFlhfB7CjaNHWYpZJDVZzM0hjx1t2K4ZO8hF6IYwAdCid0Q75Afm4_zvn9HvFsqjJF4Mh6IhpLYqJXvR84P8D9h2TQwX7PWhyKiWjU3P2k85b1YJ61K92-tWjWwVM7fSrm3r34SlAl2rGZR2NL_-OuWDQDVC5L3sOq5Z7j1kV4zEatD5X_8om_0zSH0IKm5Q</recordid><startdate>20020403</startdate><enddate>20020403</enddate><creator>Rogers, B.R.</creator><general>Elsevier B.V</general><general>Elsevier Science</general><scope>IQODW</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7QF</scope><scope>8BQ</scope><scope>8FD</scope><scope>JG9</scope><scope>7SP</scope><scope>7U5</scope><scope>L7M</scope></search><sort><creationdate>20020403</creationdate><title>Underlayer work function effect on nucleation and film morphology of chemical vapor deposited aluminum</title><author>Rogers, B.R.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c399t-32ad098d025ad00d871ed71e2d29a0da3c69cd8b2b7649380577c70efe9fcafe3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2002</creationdate><topic>Aluminum</topic><topic>Applied sciences</topic><topic>Chemical vapor deposition (CVD)</topic><topic>Chemical vapor deposition (including plasma-enhanced cvd, mocvd, etc.)</topic><topic>Condensed matter: electronic structure, electrical, magnetic, and optical properties</topic><topic>Cross-disciplinary physics: materials science; rheology</topic><topic>Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures</topic><topic>Exact sciences and technology</topic><topic>Materials science</topic><topic>Metals. Metallurgy</topic><topic>Methods of deposition of films and coatings; film growth and epitaxy</topic><topic>Nucleation</topic><topic>Physics</topic><topic>Surface double layers, schottky barriers, and work functions</topic><topic>Work function</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Rogers, B.R.</creatorcontrib><collection>Pascal-Francis</collection><collection>CrossRef</collection><collection>Aluminium Industry Abstracts</collection><collection>METADEX</collection><collection>Technology Research Database</collection><collection>Materials Research Database</collection><collection>Electronics & Communications Abstracts</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>Thin solid films</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Rogers, B.R.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Underlayer work function effect on nucleation and film morphology of chemical vapor deposited aluminum</atitle><jtitle>Thin solid films</jtitle><date>2002-04-03</date><risdate>2002</risdate><volume>408</volume><issue>1</issue><spage>87</spage><epage>96</epage><pages>87-96</pages><issn>0040-6090</issn><eissn>1879-2731</eissn><coden>THSFAP</coden><abstract>The dependence of early stage of dimethylaluminum hydride (DMAH)-sourced aluminum chemical vapor deposition on underlayer material was investigated. Identical process conditions were used to deposit the aluminum on TiN, TaN and Ti-W surfaces. Surface coverage and particle densities of aluminum deposited on TiN were much greater than those deposited on Ti-W or TaN. Work function measurements performed on the three metal surfaces suggest that the difference in nucleation rate on TiN compared to TaN and Ti-W is due its increased ability to donate electrons to the DMAH decomposition process.</abstract><cop>Lausanne</cop><pub>Elsevier B.V</pub><doi>10.1016/S0040-6090(02)00144-X</doi><tpages>10</tpages></addata></record> |
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| ispartof | Thin solid films, 2002-04, Vol.408 (1), p.87-96 |
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| source | Elsevier ScienceDirect Journals |
| subjects | Aluminum Applied sciences Chemical vapor deposition (CVD) Chemical vapor deposition (including plasma-enhanced cvd, mocvd, etc.) Condensed matter: electronic structure, electrical, magnetic, and optical properties Cross-disciplinary physics: materials science rheology Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures Exact sciences and technology Materials science Metals. Metallurgy Methods of deposition of films and coatings film growth and epitaxy Nucleation Physics Surface double layers, schottky barriers, and work functions Work function |
| title | Underlayer work function effect on nucleation and film morphology of chemical vapor deposited aluminum |
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