Langevin forces and generalized transfer fields for noise modeling in deep submicron devices

We show that the standard impedance field method that considers as noise source the spectral density of velocity fluctuations is not appropriate for the calculation of noise spectra in deep submicron devices where spatial correlations between velocity fluctuations cannot be neglected. To overcome th...

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Veröffentlicht in:	IEEE transactions on electron devices 2000-10, Vol.47 (10), p.1992-1998
Hauptverfasser:	Shiktorov, P., Starikov, E., Gruzinskis, V., Gonzalez, T., Mateos, J., Pardo, D., Reggiani, L., Varani, L., Vaissiere, J.C.
Format:	Artikel
Sprache:	eng
Schlagworte:	Computational Physics Condensed Matter Density Devices Electronics Engineering Sciences Fluctuation Impedance Materials Science Mathematical models Noise Physics Semiconductor device modeling Voltage
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