Hardness of Bulk Single-Crystal Gallium Nitride at High Temperatures
The hardness of single-crystal gallium nitride at elevated temperatures is measured and compared with that of other semiconductors. A Vickers indentation method was used to determine the hardness under an applied load of 0.5 N in the temperature range 20–1200°C. The average hardness was measured as...
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| Veröffentlicht in: | Japanese Journal of Applied Physics 2000-01, Vol.39 (3A), p.L200-L201 |
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| Hauptverfasser: | , , |
| Format: | Artikel |
| Sprache: | eng |
| Online-Zugang: | Volltext |
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