High volume RF/microwave SOI-CMOS integrated circuits
Radio frequency (RF) microwave silicon on insulator-complementary metal oxide semiconductor (SOI-CMOS) integrated circuits has significant speed and power advantages. It reduces junction capacitance, thereby inducing a reduction of the total capacitance. It also lowers threshold voltage temperature...
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| Veröffentlicht in: | Analog integrated circuits and signal processing 2000-11, Vol.25 (2), p.85-91 |
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| container_title | Analog integrated circuits and signal processing |
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| creator | Auberton-Herve, A J Barge, T Maleville, C Wittkower, A |
| description | Radio frequency (RF) microwave silicon on insulator-complementary metal oxide semiconductor (SOI-CMOS) integrated circuits has significant speed and power advantages. It reduces junction capacitance, thereby inducing a reduction of the total capacitance. It also lowers threshold voltage temperature sensitivity. SOI material is the appropriate material for advance CMOS applications. |
| doi_str_mv | 10.1023/A:1008346430921 |
| format | Article |
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| fulltext | fulltext |
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| ispartof | Analog integrated circuits and signal processing, 2000-11, Vol.25 (2), p.85-91 |
| issn | 0925-1030 |
| language | eng |
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| source | SpringerNature Journals |
| title | High volume RF/microwave SOI-CMOS integrated circuits |
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