High volume RF/microwave SOI-CMOS integrated circuits

High volume RF/microwave SOI-CMOS integrated circuits

Radio frequency (RF) microwave silicon on insulator-complementary metal oxide semiconductor (SOI-CMOS) integrated circuits has significant speed and power advantages. It reduces junction capacitance, thereby inducing a reduction of the total capacitance. It also lowers threshold voltage temperature...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Veröffentlicht in:Analog integrated circuits and signal processing 2000-11, Vol.25 (2), p.85-91
Hauptverfasser: Auberton-Herve, A J, Barge, T, Maleville, C, Wittkower, A
Format: Artikel
Sprache:eng
Online-Zugang:Volltext
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
Beschreibung
Zusammenfassung:Radio frequency (RF) microwave silicon on insulator-complementary metal oxide semiconductor (SOI-CMOS) integrated circuits has significant speed and power advantages. It reduces junction capacitance, thereby inducing a reduction of the total capacitance. It also lowers threshold voltage temperature sensitivity. SOI material is the appropriate material for advance CMOS applications.
ISSN:0925-1030
DOI:10.1023/A:1008346430921