HYDRIDE VAPOR PHASE EPITAXY OF GaN ON NdGaO3 SUBSTRATE AND REALIZATION OF FREESTANDING GaN WAFERS WITH 2-INCH SCALE
GaN thick film is grown on NdGaO3 substrate using hydride VPE. To avoid decomposition of NdGaO3 substrate by NH3, a low-temperature grown GaN protective layer is adopted. Using NdGaO3 substrate and a low-temperature GaN protective layer simultaneously, 2-in.-scale GaN wafers are realized. The photol...
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| Veröffentlicht in: | Jpn.J.Appl.Phys ,Part 1. Vol. 39, no. 4B, pp. 2399-2401. 2000 Part 1. Vol. 39, no. 4B, pp. 2399-2401. 2000, 2000, Vol.39 (4B), p.2399-2401 |
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| container_title | Jpn.J.Appl.Phys ,Part 1. Vol. 39, no. 4B, pp. 2399-2401. 2000 |
| container_volume | 39 |
| creator | Wakahara, A Yamamoto, T Ishio, K Yoshida, A Seki, Y Kainosho, K |
| description | GaN thick film is grown on NdGaO3 substrate using hydride VPE. To avoid decomposition of NdGaO3 substrate by NH3, a low-temperature grown GaN protective layer is adopted. Using NdGaO3 substrate and a low-temperature GaN protective layer simultaneously, 2-in.-scale GaN wafers are realized. The photoluminescence (PL) spectrum indicates strong band-edge emission without deep-level related emission. Both plan-view TEM and cathode luminescence images suggest that the dislocation density of freestanding GaN wafers is expected to be as low as 106 cm-2. 6 refs. |
| doi_str_mv | 10.1143/jjap.39.2399 |
| format | Article |
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| ispartof | Jpn.J.Appl.Phys ,Part 1. Vol. 39, no. 4B, pp. 2399-2401. 2000, 2000, Vol.39 (4B), p.2399-2401 |
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| source | IOP Publishing Journals; Institute of Physics (IOP) Journals - HEAL-Link |
| title | HYDRIDE VAPOR PHASE EPITAXY OF GaN ON NdGaO3 SUBSTRATE AND REALIZATION OF FREESTANDING GaN WAFERS WITH 2-INCH SCALE |
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