Phase-controllable large-area two-dimensional In2Se3 and ferroelectric heterophase junction

Memory transistors based on two-dimensional (2D) ferroelectric semiconductors are intriguing for next-generation in-memory computing. To date, several 2D ferroelectric materials have been unveiled, among which 2D In 2 Se 3 is the most promising, as all the paraelectric (β), ferroelectric (α) and ant...

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Veröffentlicht in:	Nature nanotechnology 2023-01, Vol.18 (1), p.55-63
Hauptverfasser:	Han, Wei, Zheng, Xiaodong, Yang, Ke, Tsang, Chi Shing, Zheng, Fangyuan, Wong, Lok Wing, Lai, Ka Hei, Yang, Tiefeng, Wei, Qi, Li, Mingjie, Io, Weng Fu, Guo, Feng, Cai, Yuan, Wang, Ning, Hao, Jianhua, Lau, Shu Ping, Lee, Chun-Sing, Ly, Thuc Hue, Yang, Ming, Zhao, Jiong
Format:	Artikel
Sprache:	eng
Schlagworte:	140/133 140/146 142/126 639/301/357/1018 639/925/927/1007 Antiferroelectricity Chemical synthesis Chemical vapor deposition Chemistry and Materials Science Cognitive ability Computer memory Controllability Electron mobility Ferroelectric materials Materials Science Mica Nanotechnology Nanotechnology and Microengineering Phase transitions Polymorphism Semiconductor devices Substrates Transistors
Online-Zugang:	Volltext
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