Grain-Boundaries in β-SiC: A Joined HRTEM and Numerical Atomic Study

The beta -grains which develop during recrystallisation contain many small {112} Sigma =3 boundaries. Their structure is characterised by HRTEM performed at 300 kV and image contrast is simulated in order to determine the atomic reconstruction. We perform atomistic calculations (molecular dynamics)...

Ausführliche Beschreibung

Bibliographische Detailangaben

Veröffentlicht in:	Materials science forum 1999-01, Vol.294-296, p.277-280
Hauptverfasser:	Godon, C., Ragaru, C., Lancin, Maryse, Hardouin Duparc, O.B.M.
Format:	Artikel
Sprache:	eng
Online-Zugang:	Volltext
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!