Grain-Boundaries in β-SiC: A Joined HRTEM and Numerical Atomic Study

Grain-Boundaries in β-SiC: A Joined HRTEM and Numerical Atomic Study

The beta -grains which develop during recrystallisation contain many small {112} Sigma =3 boundaries. Their structure is characterised by HRTEM performed at 300 kV and image contrast is simulated in order to determine the atomic reconstruction. We perform atomistic calculations (molecular dynamics)...

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Veröffentlicht in:Materials science forum 1999-01, Vol.294-296, p.277-280
Hauptverfasser: Godon, C., Ragaru, C., Lancin, Maryse, Hardouin Duparc, O.B.M.
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Lancin, Maryse
Hardouin Duparc, O.B.M.
description The beta -grains which develop during recrystallisation contain many small {112} Sigma =3 boundaries. Their structure is characterised by HRTEM performed at 300 kV and image contrast is simulated in order to determine the atomic reconstruction. We perform atomistic calculations (molecular dynamics) with the angular N-body Tersoff potential adapted to SiC in order to compare these reconstructions with our HRTEM observations.
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title Grain-Boundaries in β-SiC: A Joined HRTEM and Numerical Atomic Study
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