Gate layout and bonding pad structure of a RF n-MOSFET for low noise performance

Several 0.35 μm n-MOSFETs with different gate geometry were analyzed to maximize the RF performance, after that the pads were shielded to ground to reduce the noise contribution of pads. The F min of 0.5 dB was improved by utilizing the ground-shielded pads, and the F min of 0.2 dB was improved by u...

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Veröffentlicht in:	IEEE electron device letters 2000-12, Vol.21 (12), p.607-609
Hauptverfasser:	Cheon Soo Kim, Jung-Woo Park, Hyun Kyu Yu, Cho, H.
Format:	Artikel
Sprache:	eng
Schlagworte:	Atherosclerosis Bonding CMOS technology Geometry Low-noise amplifiers MOSFET circuits Noise reduction Performance analysis Radio frequency Radiofrequency amplifiers
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