The effects of the process parameters on the electrical and microstructure characteristics of the CrSi thin resistor films : part I

The effects of process parameters, such as target composition, sputtering pressure, reactive gas partial pressure, deposition rate, and anneal temperature, on the electrical and microstructure characteristics of CrSi thin resistor films in very large scale integrated circuits (VLSI) application were...

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Veröffentlicht in:	Thin solid films 1998-11, Vol.332 (1-2), p.418-422
Hauptverfasser:	FAN WU, MCLAURIN, A. W, HENSON, K. E, MANAGHAN, D. G, THOMASSON, S. L
Format:	Artikel
Sprache:	eng
Schlagworte:	Applied sciences Electronics Exact sciences and technology Microelectronic fabrication (materials and surfaces technology) Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Online-Zugang:	Volltext
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