Ag/n-GaAs Schottky MIS diodes with surface insulating layers prepared using (NH sub(4)) sub(2)S solutions without water
A study of the Schottky barrier height (SBH) and the ideality factor n was made using results of the temperature dependence of the experimental forward and reverse bias current-voltage (I-V) characteristics of Ag/n-GaAs MIS diodes. The diodes were fabricated on n-GaAs substrates utilizing insulating...
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| Veröffentlicht in: | Solid-state electronics 1998-01, Vol.42 (1), p.23-27 |
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| Hauptverfasser: | , , |
| Format: | Artikel |
| Sprache: | eng |
| Online-Zugang: | Volltext |
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