Fabrication and characterization of in situ-doped a-Si sub(0.8)C sub(0.2) emitter bipolar transistors

Silicon-carbon emitters were deposited by plasma enhanced chemical vapour deposition (PECVD) on a conventional silicon transistor base. The resulting transistors were annealed after the emitter had been deposited which led to the dopant diffusing from the amorphous layer into the crystalline base. T...

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Veröffentlicht in:	Solid-state electronics 2000-09, Vol.44 (9), p.1543-1548
Hauptverfasser:	Orpella, A, Puigdollers, J, Bardes, D, Alcubilla, R, Marsal, L F, Pallares, J
Format:	Artikel
Sprache:	eng
Online-Zugang:	Volltext
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